Single FETs, MOSFETs APT70SM70S product image

APT70SM70S

$12.33
  • Description:SICFET N-CH 700V 65A D3PAK
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk

SKU:9ba7c4852086 Category: Brand:

  
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APT70SM70S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is SICFET N-CH 700V 65A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT70SM70S

  • Description:SICFET N-CH 700V 65A D3PAK
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):700 V
  • Current - Continuous Drain (Id) @ 25°C:65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:70mOhm @ 32.5A, 20V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:125 nC @ 20 V
  • Vgs (Max):+25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):220W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D3PAK
  • Package / Case:TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT70SM70S

APT70SM70S

Single FETs, MOSFETs Overview

The APT70SM70S is a Silicon Carbide N-Channel enhancement mode power MOSFET manufactured by Microsemi Corporation. It features a 700V drain-to-source voltage rating and supports a continuous drain current of 65A at case temperature. The device exhibits a maximum on-resistance of 70 mOhm at 32.5A and 20V gate drive. It is designed for surface mount applications in the D3PAK package, offering thermal management capabilities up to 220W at case temperature with an operating junction temperature range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes Silicon Carbide (SiC) technology for enhanced performance
  • Designed as an N-Channel enhancement mode power MOSFET
  • Optimized for low conduction and switching losses
  • Supports high-temperature operation up to 175°C junction temperature

Single FETs, MOSFETs Applications

  • High voltage power conversion systems
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • High-efficiency DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm the specific revision level and packaging details against official datasheets prior to integration. Ensure compliance with RoHS directives if required by the end application. Check for obsolete status indicators as availability may be limited compared to newer generations.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage blocking capability combined with low on-state resistance in a compact surface-mount form factor. Consider the thermal characteristics and D3PAK package limitations when designing heat dissipation solutions. Evaluate the switching speed and gate charge parameters against the driving circuit requirements to ensure efficient operation within the specified temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the Power MOS 7 series of high-voltage N-Channel enhancement mode power MOSFETs. The series focuses on reducing both conduction and switching losses for improved efficiency. Microsemi Corporation, now part of Microchip Technology, developed this line to address demanding power electronics applications requiring robust performance under high stress conditions.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology technical support for cross-reference recommendations or next-generation replacements compatible with the D3PAK package and electrical specifications.

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