Single FETs, MOSFETs APT7F120S product image

APT7F120S

$5.43
  • Description:MOSFET N-CH 1200V 7A D3PAK
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube

SKU:62707a57941f Category: Brand:

  
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APT7F120S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 7A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT7F120S

  • Description:MOSFET N-CH 1200V 7A D3PAK
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2.4Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2565 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):335W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D3PAK
  • Package / Case:TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT7F120S

APT7F120S

Single FETs, MOSFETs Overview

The APT7F120S is a single N-channel FREDFET MOS 8 power transistor manufactured by Microchip Technology. It features a maximum drain-source voltage of 1200 V and a continuous drain current of 7 A at case temperature. The device has a maximum on-state resistance of 2400 milliohms and supports a power dissipation of 335 W at case temperature. It operates within a temperature range of -55°C to +150°C and utilizes a TO-268 surface mount package.

Single FETs, MOSFETs Feature Summary

  • Utilizes FREDFET MOS 8 technology for optimized switching performance
  • Designed for high-voltage applications with 1200 V breakdown capability
  • Surface mount construction in a TO-268 package for efficient thermal management

Single FETs, MOSFETs Applications

  • High-frequency switching power supplies
  • Inductive load switching circuits
  • Motor control systems requiring fast recovery characteristics

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the official Microchip datasheet before procurement. Confirm that the TO-268 footprint matches your PCB design requirements. Ensure thermal interface materials are compatible with the specified power dissipation limits. Check for any recent product change notices or lifecycle status updates directly from the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage, fast-recovery single FET is required in a surface-mount configuration. The 1200 V rating suits industrial and automotive applications. Consider the 7 A current limit and 2400 milliohm resistance for efficiency calculations. Evaluate thermal constraints given the 335 W dissipation rating at case temperature.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's FREDFET MOS 8 family, which focuses on fast recovery epitaxial diode technologies. These devices are engineered for hard-switching applications where low reverse recovery charge is critical. The TO-268 package provides a balance between electrical performance and mounting convenience for medium-power designs.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip documentation for direct pin-compatible substitutes. Verify voltage, current, and package dimensions match exactly. Cross-reference switching times and thermal resistance values to ensure equivalent performance in the target circuit.

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