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APTM100DA33T1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1000V 23A SP1. Review the specifications below when checking this part for your BOM.
The APTM100DA33T1G is a power module manufactured by Microsemi Corporation. It integrates an N-channel MOSFET and a SiC chopper diode within a single package. The device supports a drain-to-source voltage of 1000V and a continuous drain current of 23A at 25°C. The gate threshold voltage is specified at 2.5mA for a VGS of 5V. This component is designed for high-voltage switching applications requiring robust performance.
Verify the manufacturer designation carefully, as Microsemi's semiconductor assets were acquired by Microchip Technology. Ensure the specific part number matches the required electrical specifications and package type. Confirm RoHS compliance status and check for any relevant product change notices or obsolescence announcements from the current rights holder before finalizing procurement decisions.
Select this module when designing systems that require high blocking voltage capability combined with fast switching characteristics. The integration of the SiC diode reduces reverse recovery losses compared to standard silicon alternatives. Evaluate thermal management requirements based on the 23A continuous current rating and the specific operating temperature range defined in the official datasheet.
This component belongs to the APTM series of power modules from Microsemi. These modules are typically utilized in demanding power electronics applications where space constraints and thermal performance are critical. The combination of MOSFET and SiC diode offers a compact solution for efficient energy conversion in industrial and automotive sectors.
Publicly confirmed substitute part numbers are not available in the provided source material. Users should consult official Microchip or Microsemi documentation for qualified replacements or cross-reference options.
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