APTM120DA56T1G

$28.29

Description：MOSFET N-CH 1200V 18A SP1
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:ebce0f0d4082 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

APTM120DA56T1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1200V 18A SP1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APTM120DA56T1G

Description：MOSFET N-CH 1200V 18A SP1
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：672mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：300 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：7736 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：390W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SP1
Package / Case：SP1

Single FETs, MOSFETs datasheet and documents for APTM120DA56T1G

APTM120DA56T1G

Single FETs, MOSFETs Overview

The APTM120DA56T1G is a single N-channel power MOSFET manufactured by Microsemi Corporation. It features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 18 A at case temperature. The device has a maximum power dissipation of 390 W at case temperature and operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a gate charge (Qg) of 300 nC at 10 V, an input capacitance (Ciss) of 7736 pF at 25 V, and a gate-source voltage (Vgs) rating of ±30 V. The on-resistance (Rds(on)) is 672 mΩ at 14 A and 10 V gate drive. It utilizes the SP1 chassis mount package.

Single FETs, MOSFETs Feature Summary

High-voltage capability with 1200 V drain-source breakdown voltage for robust operation in demanding power environments.
Chassis mount SP1 package design facilitates efficient thermal management and secure mechanical installation.
N-channel enhancement mode construction optimized for high-efficiency switching applications.

Single FETs, MOSFETs Applications

Industrial motor drives
Power supply circuits
Inverter systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Microsemi distributors or certified suppliers. Confirm part number accuracy against official datasheets due to potential legacy status. Check for RoHS compliance documentation if required for specific regulatory standards. Ensure proper handling procedures are followed during storage and installation to maintain device integrity.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage isolation and moderate current handling in a chassis-mount form factor. Consider the 1200 V rating for safety margins in high-voltage DC links. Evaluate thermal requirements against the 390 W dissipation limit and ensure adequate heatsinking for the SP1 package. Compare Rds(on) characteristics with alternative devices to optimize conduction losses in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to Microsemi's discrete power semiconductor portfolio, specifically designed for high-voltage switching applications. The SP1 package is a standard chassis-mount format used in industrial and power conversion equipment. Microsemi, now part of Microchip Technology, provides these components for reliable performance in harsh operating conditions.