AS1M040120T

$19.30

Description：N-CHANNEL SILICON CARBIDE POWER
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tube

SKU:c0a80cd4a7e6 Category: Single FETs, MOSFETs Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

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Product introduction

AS1M040120T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is N-CHANNEL SILICON CARBIDE POWER. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AS1M040120T

Description：N-CHANNEL SILICON CARBIDE POWER
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：142 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：2946 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：330W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for AS1M040120T

AS1M040120T

Single FETs, MOSFETs Overview

The AS1M040120T is an N-Channel Silicon Carbide Power MOSFET housed in a TO-247-4 package. It features a drain-source voltage rating of 1200 V and a continuous drain current of 60 A at 25°C. The device exhibits a maximum on-resistance of 55 mΩ at VGS=20V. Key dynamic parameters include a total gate charge of 142 nC, turn-on switching energy of 1.1 mJ, and reverse recovery time of 41 ns. Thermal resistance from junction to case is 0.34 °C/W.

Single FETs, MOSFETs Feature Summary

High blocking voltage capability combined with low on-resistance for efficient power handling
Fast switching performance characterized by low capacitance values
Designed for easy paralleling and straightforward drive requirements

Single FETs, MOSFETs Applications

Power Supplies
Switch Mode Power Supplies
High Voltage DC/DC Converters
Motor Drivers
Pulsed Power Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation and datasheet revision against official Anbon Semiconductor documentation before integration. Confirm that the TO-247-4 pinout matches your PCB footprint design. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance for reliable operation under load conditions.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust switching speeds. Evaluate the 1200 V breakdown voltage against system transients. Consider the 55 mΩ on-resistance for conduction loss calculations. Verify gate drive compatibility with the recommended operational voltage range of -5 V to +20 V for optimal performance.

Single FETs, MOSFETs Part Context

This silicon carbide MOSFET belongs to the high-power semiconductor category designed for demanding electrical environments. The TO-247-4 package provides mechanical stability and effective heat dissipation pathways. It serves as a critical switching element in systems where efficiency and voltage tolerance are primary design constraints.