Single FETs, MOSFETs AUIRF3205ZS product image

AUIRF3205ZS

$1.32
  • Description:MOSFET N-CH 55V 75A D2PAK
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk

SKU:0b4be26c7877 Category: Brand:

  
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AUIRF3205ZS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 55V 75A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF3205ZS

  • Description:MOSFET N-CH 55V 75A D2PAK
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 66A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3450 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):170W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRF3205ZS

AUIRF3205ZS

Single FETs, MOSFETs Overview

The AUIRF3205ZS is an automotive-grade N-channel enhancement mode MOSFET from the HEXFET family, manufactured by International Rectifier. It features a D2PAK (TO-263) surface-mount package with a maximum drain-source voltage of 55V and a continuous drain current of 75A at case temperature. The device exhibits a maximum on-resistance of 6.5 milliohms at 10V gate drive and 66A. Key electrical parameters include a maximum gate charge of 110nC at 10V and an input capacitance of 3450pF at 25V. It operates within a junction temperature range of -55°C to 175°C and complies with AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

  • Automotive-grade reliability certified under AEC-Q101 standards for harsh environment operation
  • Low on-resistance design utilizing fifth-generation HEXFET process technology
  • Enhanced thermal performance with high power dissipation capability in D2PAK packaging

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-current DC-DC converters
  • Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'ZS' against the manufacturer's official datasheet to confirm exact pinout and marking variations. Ensure the component meets the required AEC-Q101 qualification level for your target application. Cross-reference the D2PAK package dimensions with your PCB footprint requirements. Confirm that the 75A current rating aligns with your thermal management design constraints.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET is required for automotive environments. The 55V rating suits low-voltage power systems. The D2PAK package offers a balance between current handling and surface-mount convenience. Consider the 6.5mΩ on-resistance for efficiency calculations. Verify compatibility with standard logic-level or 10V gate drivers for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the IRF3205 series, a well-established line of power MOSFETs known for high current capabilities. The 'AU' prefix indicates automotive qualification, while 'ZS' denotes the specific D2PAK tape-and-reel packaging variant. It serves as a rugged solution for replacing older through-hole TO-220 versions in modern compact designs.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include the IRF3205ZPBF for leaded TO-220AB packages if form factor changes are acceptable. For identical D2PAK footprints, verify equivalent HEXFET devices with matching 55V and 75A ratings. Always validate thermal resistance and gate charge specifications before substitution.

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