AUIRF5210STRL

$5.21

Description：MOSFET P-CH 100V 38A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:848766b6ce26 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRF5210STRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 38A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF5210STRL

Description：MOSFET P-CH 100V 38A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：230 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2780 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 170W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRF5210STRL

AUIRF5210STRL

Single FETs, MOSFETs Overview

The AUIRF5210STRL is an automotive-grade P-channel HEXFET power MOSFET in a D2Pak (TO-263AB) surface-mount package. It features a maximum drain-source voltage of -100V and a continuous drain current of -38A at 25°C case temperature. The device exhibits a maximum on-resistance of 60mΩ at VGS = -10V. Key electrical characteristics include a total gate charge of 150nC, a single-pulse avalanche energy rating of 120mJ, and a peak diode recovery dv/dt of -7.4 V/ns. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards for high reliability
Fully avalanche rated with repetitive avalanche capability up to Tjmax
Advanced process technology enabling ultra-low on-resistance
Fast switching speed combined with ruggedized device design

Single FETs, MOSFETs Applications

Automotive power management systems
High-side load switching applications
Motor control circuits
DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix STRL corresponds to the Tape and Reel Left form factor containing 800 units per standard pack. Confirm that the component meets RoHS compliance requirements and holds valid Automotive qualification status as defined by Infineon's published standards before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing for automotive environments requiring robust avalanche handling and low conduction losses. Ensure the thermal design accommodates the specified junction-to-case thermal resistance. Verify that the gate drive voltage levels align with the -10V threshold for optimal RDS(on) performance and switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. The 'AU' prefix indicates automotive grade qualification, while the 'STRL' suffix denotes the tape and reel packaging format. It is distinct from non-automotive variants and through-hole packages within the same electrical specification family.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the -100V P-channel specification, TO-263AB package, and automotive qualification. Verify equivalent RDS(on), gate charge, and avalanche ratings. Cross-reference with other Infineon HEXFET automotive parts or industry-standard equivalents ensuring identical pinout and thermal characteristics.