Single FETs, MOSFETs AUIRF7640S2TR product image

AUIRF7640S2TR

$1.93
  • Description:MOSFET N-CH 60V 5.8A DIRECTFET
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d56f390409cb Category: Brand:

  
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AUIRF7640S2TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 5.8A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF7640S2TR

  • Description:MOSFET N-CH 60V 5.8A DIRECTFET
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:5.8A (Ta), 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:36mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id:5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.4W (Ta), 30W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:DIRECTFET SB
  • Package / Case:DirectFET™ Isometric SB

Single FETs, MOSFETs datasheet and documents for AUIRF7640S2TR

AUIRF7640S2TR

Single FETs, MOSFETs Overview

The AUIRF7640S2TR is an automotive-grade N-channel enhancement-mode MOSFET from the HEXFET series, utilizing DirectFET SB packaging. It features a drain-source voltage of 60 V and a typical on-resistance of 27 mΩ (max 36 mΩ). The device supports a continuous drain current of 21 A at 25°C case temperature and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a total gate charge of 7.3 nC and an internal gate resistance of 3.5 Ω.

Single FETs, MOSFETs Feature Summary

  • Optimized for Class D audio amplifier applications with low gate charge and reverse recovery characteristics to improve efficiency and reduce EMI.
  • DirectFET packaging enables dual-sided cooling and offers lower parasitic inductance compared to conventional wire-bonded packages.
  • Automotive qualified under AEC-Q101 standards with repetitive avalanche capability for robustness.

Single FETs, MOSFETs Applications

  • Automotive Class D audio amplifiers
  • High-speed switching systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TR indicates tape and reel packaging with a standard quantity of 4800 units. Confirm the component meets AEC-Q101 qualification requirements for automotive environments. Ensure application notes regarding DirectFET manufacturing processes are followed during assembly.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low Rds(on) and Qg to enhance thermal efficiency and signal fidelity. The DirectFET SB package is suitable for layouts compatible with existing power application geometries and standard soldering techniques.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family, combining advanced silicon technology with the DirectFET platform. It is designed specifically to address performance factors such as THD and EMI in automotive power systems.

Single FETs, MOSFETs Replacement Considerations

Check datasheet compatibility for pinout and thermal characteristics when substituting. Verify that alternative components meet the same AEC-Q101 automotive qualification level and DirectFET package constraints.

AUIRF7640S2TRAUIRF7640S2TR
$1.93
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