AUIRFL014N

Description：MOSFET N-CH 55V 1.5A SOT-223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:ae6a6cbc5312 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFL014N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 1.5A SOT-223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFL014N

Description：MOSFET N-CH 55V 1.5A SOT-223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：160mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：190 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for AUIRFL014N

AUIRFL014N

Single FETs, MOSFETs Overview

The AUIRFL014N is an automotive-grade N-channel HEXFET power MOSFET in a SOT-223 package. It features a 55V drain-source breakdown voltage and a maximum on-resistance of 0.16 ohms at VGS=10V. The device supports continuous drain currents up to 2.7A at 25°C and handles pulsed currents of 15A. It operates within a junction temperature range of -55°C to +150°C, dissipating up to 2.1W on a standard copper board. Key dynamic characteristics include a total gate charge of 7nC typical and a peak diode recovery dv/dt rating of 5.0 V/ns.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards for high reliability
Fully avalanche rated with repetitive avalanche capability allowed up to Tjmax
Advanced planar technology ensures low on-resistance per silicon area
Fast switching speed combined with ruggedized device design

Single FETs, MOSFETs Applications

Automotive electronic systems
Cellular design applications
General purpose switching circuits requiring automotive grade components

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your packaging needs, such as TR for tape and reel quantities. Confirm that the component meets the exact AEC-Q101 qualification level intended for your automotive application. Ensure thermal management designs account for the specified junction-to-ambient resistance values under your specific PCB footprint conditions.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-rated N-channel MOSFET with low on-resistance is required. Consider the 55V voltage rating and 1.9A continuous current limits for load requirements. Evaluate the thermal performance based on the specific PCB mounting style, as power dissipation varies significantly between minimum footprint and large copper board configurations.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes advanced processing techniques to achieve efficient performance in a compact SOT-223 surface-mount package. The device is designed to provide reliable operation in demanding environments, leveraging the robustness associated with the HEXFET brand for automotive and industrial uses.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering similar 55V ratings and comparable RDS(on) values. Verify that any substitute also holds AEC-Q101 automotive qualification if required. Ensure pinout compatibility with the SOT-223 package and confirm that thermal and electrical characteristics meet or exceed the original specifications.