AUIRFU4104

Single FETs, MOSFETs Overview

The AUIRFU4104 is an N-channel enhancement mode power MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features a maximum drain-source voltage of 40 V and a continuous drain current of 119 A (silicon limited) or 42 A (package limited). The device has a maximum on-resistance of 5.5 mΩ at VGS = 10V. It operates within a junction temperature range of -55°C to +175°C with a maximum power dissipation of 140 W. The component is housed in an I-Pak (TO-251AA) through-hole package.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for high reliability applications
• Advanced process technology enabling extremely low on-resistance per silicon area
• Capable of repetitive avalanche operation up to maximum junction temperature
• Fast switching speed combined with improved thermal performance

Single FETs, MOSFETs Applications

• Automotive power switching circuits
• High-efficiency motor control systems
• General purpose power management applications requiring robust thermal handling

Single FETs, MOSFETs Procurement Notes

Verify that the specific order corresponds to the AUIRFU4104 variant utilizing the I-Pak (TO-251AA) package configuration. Confirm automotive qualification status if required for the target application environment. Ensure compatibility with standard through-hole mounting processes and verify lead-free RoHS compliance requirements against project specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a through-hole N-channel MOSFET with automotive grade reliability is required. The 40 V rating suits low-voltage DC-DC converters and load switches. Consider the 42 A package-limited current for sizing copper traces and heatsinking. Evaluate the 5.5 mΩ on-resistance against conduction loss requirements compared to surface-mount alternatives like the D-Pak version.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family of power MOSFETs. It shares core electrical characteristics with the AUIRFR4104 but differs in physical packaging. The AUIRFU4104 specifically utilizes the I-Pak form factor designed for through-hole insertion, distinguishing it from surface-mount variants within the same electrical specification group.

Single FETs, MOSFETs Replacement Considerations

AUIRFR4104 serves as a direct functional substitute with identical electrical parameters but utilizes a D-Pak (TO-252AA) surface-mount package instead of the I-Pak through-hole configuration.