Single FETs, MOSFETs AUIRFZ48N product image

AUIRFZ48N

  • Description:MOSFET N-CH 55V 69A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:5b73b376d78f Category: Brand:

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AUIRFZ48N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 69A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFZ48N

  • Description:MOSFET N-CH 55V 69A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:69A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:14mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id:4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):160W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRFZ48N

AUIRFZ48N

Single FETs, MOSFETs Overview

The AUIRFZ48N is an automotive-grade N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 55 V and a typical on-resistance of 11 mΩ, with a maximum rating of 14 mΩ at 10 V gate drive. The device supports a continuous drain current of 69 A at 25°C case temperature and handles pulsed currents up to 270 A. Total gate charge is typically 42 nC, enabling fast switching speeds. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO-220AB through-hole package.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q101 standards
  • Stripe planar technology for low on-resistance per silicon area
  • Ruggedized design supporting unclamped inductive switching
  • Lead-free packaging with RoHS compliance

Single FETs, MOSFETs Applications

  • Automotive motor control systems
  • Automotive switch mode power supplies (SMPS)
  • High-side or low-side load switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tube quantity and lead-free status. Confirm that the component meets the intended automotive reliability requirements by checking the latest datasheet revision. Ensure the supplier provides traceability documentation consistent with Infineon's quality guidelines for automotive parts.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with low conduction losses is required for 12V automotive architectures. The TO-220 package facilitates direct heatsinking for high-current scenarios. Consider the thermal resistance and safe operating area limits when designing for continuous high-load conditions or repetitive avalanche events.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family, utilizing stripe planar technology to optimize performance. It is specifically engineered for automotive environments, offering higher reliability than standard industrial counterparts. The device integrates an intrinsic body diode suitable for inductive load switching applications common in vehicle electronics.

Single FETs, MOSFETs Replacement Considerations

IRFZ48N

Single FETs, MOSFETs FAQ

Is the AUIRFZ48N qualified for automotive applications?

Yes, the device is qualified according to AEC-Q101 standards for automotive use.

What is the maximum allowable gate-to-source voltage?

The absolute maximum rating for gate-to-source voltage is ±20 V.

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