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AUIRFZ48N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 69A TO220AB. Review the specifications below when checking this part for your BOM.
The AUIRFZ48N is an automotive-grade N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 55 V and a typical on-resistance of 11 mΩ, with a maximum rating of 14 mΩ at 10 V gate drive. The device supports a continuous drain current of 69 A at 25°C case temperature and handles pulsed currents up to 270 A. Total gate charge is typically 42 nC, enabling fast switching speeds. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO-220AB through-hole package.
Verify the specific ordering suffix matches the required tube quantity and lead-free status. Confirm that the component meets the intended automotive reliability requirements by checking the latest datasheet revision. Ensure the supplier provides traceability documentation consistent with Infineon's quality guidelines for automotive parts.
Select this component when a robust N-channel MOSFET with low conduction losses is required for 12V automotive architectures. The TO-220 package facilitates direct heatsinking for high-current scenarios. Consider the thermal resistance and safe operating area limits when designing for continuous high-load conditions or repetitive avalanche events.
This part belongs to Infineon's HEXFET family, utilizing stripe planar technology to optimize performance. It is specifically engineered for automotive environments, offering higher reliability than standard industrial counterparts. The device integrates an intrinsic body diode suitable for inductive load switching applications common in vehicle electronics.
IRFZ48N
Yes, the device is qualified according to AEC-Q101 standards for automotive use.
The absolute maximum rating for gate-to-source voltage is ±20 V.
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