AUIRLL024N

Description：MOSFET N-CH 55V 3.1A SOT-223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:1172a407e9f1 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRLL024N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 3.1A SOT-223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLL024N

Description：MOSFET N-CH 55V 3.1A SOT-223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.6 nC @ 5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：510 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for AUIRLL024N

AUIRLL024N

Single FETs, MOSFETs Overview

The AUIRLL024N is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced planar technology to achieve low on-resistance per silicon area within a SOT-223 (TO-261AA) surface-mount package. The device features logic level gate drive capability and fast switching speeds. Key electrical parameters include a maximum drain-to-source voltage of 55V, a continuous drain current of 3.1A at 25°C, and a maximum static drain-to-source on-resistance of 0.065Ω at VGS=10V. It supports a junction temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Automotive qualified according to AEC-Q101 standards for ruggedized reliability
Logic level gate drive enables efficient control with standard drivers
Fast switching speed combined with fully avalanche rated design
Advanced planar technology ensures low dynamic on-resistance

Single FETs, MOSFETs Applications

Automotive cellular designs
General automotive electronic circuits
Low voltage power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TR' indicates tape and reel packaging containing 2500 devices. Confirm that the component meets RoHS compliance requirements and holds valid Automotive qualification status per AEC-Q101 before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing for automotive environments requiring high reliability and thermal stability up to 150°C. Ensure the application operates within the 55V breakdown limit and accounts for the 3.1A continuous current rating under appropriate PCB mounting conditions to maintain safe operating temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs produced by Infineon Technologies. It represents a specialized automotive variant designed to withstand harsh environmental conditions while providing efficient power switching capabilities in compact surface-mount packages suitable for modern electronic assemblies.

Single FETs, MOSFETs Replacement Considerations

Direct replacement requires verifying identical pinout compatibility and ensuring the substitute component meets or exceeds the 55V voltage rating, 3.1A current capacity, and automotive qualification standards required for the original application.