AUIRLR3114Z

Single FETs, MOSFETs Overview

The AUIRLR3114Z is an automotive-grade N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 40V and an ultra-low on-resistance, with typical values of 3.9mΩ at VGS=10V and 5.2mΩ at VGS=4.5V. The device supports continuous drain currents up to 130A (silicon limited) or 42A (package limited). Key electrical characteristics include a gate threshold voltage range of 1.0V to 2.5V, total gate charge of 40nC typ., and fast switching times. It operates within a junction temperature range of -55°C to +175°C and allows repetitive avalanche operation.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for reliability in vehicle environments
• Advanced process technology enables extremely low on-resistance per silicon area
• Logic level gate drive capability for efficient control by standard microcontrollers
• Supports repetitive avalanche energy ratings up to the maximum junction temperature

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control applications
• High-side and low-side switching loads

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the part number corresponds to D-Pak (TO-252AA) surface mount or I-Pak (TO-251AA) through-hole configurations depending on the suffix. Confirm that the application environment meets the AEC-Q101 qualification requirements. Ensure thermal management designs account for the specified junction-to-case thermal resistance and power dissipation limits under operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical in 40V automotive systems. The logic-level gate drive simplifies driver circuit design compared to higher voltage threshold devices. Consider the package current limit of 42A for continuous operation rather than the silicon-limited rating. Evaluate thermal performance using the provided transient thermal impedance curves for pulsed applications.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family, utilizing specialized processing techniques to minimize resistance while maintaining robustness. The 'AU' prefix indicates automotive grade qualification. It serves as a high-current switching element in power electronics, offering improved efficiency over standard MOSFETs through optimized silicon architecture and fast switching characteristics suitable for modern power management topologies.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 40V rating, N-channel configuration, and similar RDS(on) specifications. Verify pinout compatibility between D-Pak and I-Pak packages if changing form factors. Ensure any replacement also holds automotive qualification if used in vehicle systems. Check gate charge and switching speeds to maintain existing timing margins.