RF Diode BAP50-05W,115 product image

BAP50-05W,115

$0.30
  • Description:RF DIODE PIN 50V 240MW SC-70
  • Series:-

SKU:29b0fc78a93d Category: Brand:

  
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BAP50-05W,115 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF DIODE PIN 50V 240MW SC-70. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP50-05W,115

  • Description:RF DIODE PIN 50V 240MW SC-70
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - 1 Pair Common Cathode
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.5pF @ 5V, 1MHz
  • Resistance @ If, F:5Ohm @ 10mA, 100MHz
  • Power Dissipation (Max):240 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAP50-05W,115

BAP50-05W,115

RF Diode Overview

The BAP50-05W is a silicon PIN diode featuring two planar elements in a common cathode configuration, housed in a SOT323 small surface-mount plastic package. It supports a continuous reverse voltage of 50 V and a continuous forward current of 50 mA. Key electrical characteristics include a typical diode capacitance of 0.45 pF at zero bias and a maximum forward voltage of 1.1 V at 50 mA. The device exhibits low series inductance (1.6 nH) and charge carrier lifetime of 1.05 µs, enabling effective performance in general RF applications.

RF Diode Feature Summary

  • Two planar PIN diodes integrated in a common cathode configuration within a compact SMD package
  • Low diode capacitance for high-frequency signal handling
  • Low diode forward resistance to minimize insertion loss

RF Diode Applications

  • General RF applications
  • RF attenuators
  • RF switches

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications. Ensure that the component meets RoHS compliance requirements and matches the intended thermal management capabilities for the target operating environment before finalizing procurement orders.

RF Diode Selection Notes

Select this component when a dual-diode solution with common cathode topology is required in a minimal footprint. The SOT323 package is suitable for space-constrained designs. Evaluate the 50 V reverse voltage and 50 mA forward current limits to ensure they align with the circuit's operational stress conditions and power dissipation requirements.

RF Diode Part Context

This part belongs to NXP Semiconductors' portfolio of silicon PIN diodes designed for radio frequency circuits. The BAP50-05W variant specifically integrates two diodes into a single SOT323 package, offering a compact alternative to discrete single-diode implementations for balanced or differential RF signal processing tasks.

RF Diode Replacement Considerations

Consult the manufacturer's cross-reference data for verified substitutes. Ensure any replacement maintains the SOT323 package outline and common cathode pinout configuration to guarantee mechanical and electrical compatibility without requiring PCB layout modifications.

RF Diode FAQ

What is the pin configuration for the BAP50-05W?

Pin 1 is an anode, Pin 2 is an anode, and Pin 3 serves as the common cathode.

What is the typical diode capacitance at zero bias?

The typical diode capacitance is 0.45 pF when measured at 1 MHz with 0 V reverse voltage.

What is the maximum continuous forward current rating?

The maximum continuous forward current is rated at 50 mA.

BAP50-05W,115BAP50-05W,115
$0.30
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