Single FETs, MOSFETs BMS3003-1E product image

BMS3003-1E

  • Description:MOSFET P-CH 60V 78A TO220F-3SG
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:0404ae8d0944 Category: Brand:

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BMS3003-1E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 60V 78A TO220F-3SG. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BMS3003-1E

  • Description:MOSFET P-CH 60V 78A TO220F-3SG
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:78A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:285 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:13200 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta), 40W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3SG
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for BMS3003-1E

BMS3003-1E

Single FETs, MOSFETs Overview

The onsemi BMS3003-1E is a P-Channel Power MOSFET manufactured using silicon technology. It features a maximum drain-source voltage rating of -60V and a continuous drain current capacity of -78A. The device exhibits a maximum on-resistance (Rdson) of 0.0065Ω. Key electrical parameters include a gate charge of 285 nC and a rise time of 360 ns. The component supports a power dissipation of 40W and operates within a temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • P-Channel silicon MOSFET construction
  • High current handling capability up to 78A
  • Low on-resistance for efficient power switching
  • Robust thermal performance with high power dissipation

Single FETs, MOSFETs Applications

  • Power management circuits
  • Motor control systems
  • Industrial automation interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '1E' against the official datasheet to confirm pinout and package variations. Check lifecycle status as sources indicate potential obsolescence. Ensure compatibility with TO-220FP mounting requirements. Confirm RoHS compliance details for regulatory adherence. Validate thermal resistance values for heat sink design.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-current P-Channel switching at 60V. Consider the TO-220FP package for through-hole mounting and adequate heat sinking. Evaluate the 0.0065Ω Rdson for conduction loss calculations. Compare gate charge specifications for switching speed requirements in drive circuits.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's discrete semiconductor product line, specifically power MOSFETs. It utilizes standard silicon technology rather than wide-bandgap materials like GaN or SiC. The device is designed for general-purpose power switching applications in industrial and automotive sectors.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify direct replacements through official onsemi cross-reference tools.

BMS3003-1EBMS3003-1E

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