BS870-7-F

$0.24

Description：MOSFET N-CH 60V 250MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2c5a4eb26527 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

BS870-7-F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 60V 250MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BS870-7-F

Description：MOSFET N-CH 60V 250MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BS870-7-F

BS870-7-F

Single FETs, MOSFETs Overview

The BS870-7-F is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 60V and a maximum continuous drain current (ID) of 250mA. The device exhibits a static drain-source on-resistance (RDS(ON)) of up to 5Ω at VGS = 10V and ID = 0.2A, with a typical value of 3.5Ω. Gate threshold voltage (VGS(TH)) ranges from 1.0V to 3.0V at ID = 250µA. Total power dissipation is rated at 300mW, with a thermal resistance junction-to-ambient of 417°C/W. Operating temperature spans -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for low on-state resistance while maintaining superior switching performance
Features low gate threshold voltage suitable for logic level gate drive switching
Compliant with RoHS directives and free of halogen and antimony

Single FETs, MOSFETs Applications

Motor Control
Power Management Functions
Backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7-F' corresponds to the standard tape and reel packaging configuration as documented in the manufacturer's datasheet. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen-free status, if mandated by the design specifications. Ensure the procurement channel provides traceability consistent with the manufacturer's quality definitions.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SOT23 package is required for low-voltage switching applications. The 60V rating and 250mA current capability define its operational limits. Consider the 5Ω maximum on-resistance for efficiency calculations in power management circuits. Verify that the logic-level gate drive requirement aligns with the system's control voltage levels.

Single FETs, MOSFETs Part Context

This part belongs to the BS870 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes a molded plastic SOT23 case material classified as UL 94V-0. The device is designed for high reliability and is qualified to JEDEC standards. It serves as a surface-mount solution for general-purpose switching tasks within electronic assemblies.