BUL642D2G

Single Bipolar Transistors Overview

The BUL642D2G is a high-speed, high-gain NPN bipolar junction transistor manufactured by onsemi. It features a collector-emitter voltage (Vceo) of 440 V and a continuous collector current (Ic) of 3 A. The device has a power dissipation rating of 75 W and a transition frequency (fT) of 13 MHz. It is housed in a TO-220 package with an emitter-base voltage (Vebo) of 11 V and a collector-emitter saturation voltage of 1.5 V.

Single Bipolar Transistors Feature Summary

• High-voltage capability with 440 V collector-emitter breakdown
• High-current handling with 3 A continuous collector current
• Integrated collector-emitter structure for improved efficiency
• Through-hole TO-220 packaging for robust thermal management

Single Bipolar Transistors Applications

• High-voltage switching applications
• Power amplifier circuits
• Industrial control systems requiring high gain
• Automotive electronics components

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required configuration. Confirm that the TO-220 through-hole package aligns with the target PCB design. Ensure thermal management solutions are adequate for the 75 W power dissipation rating under actual operating conditions. Cross-reference the datasheet electrical characteristics against system requirements to guarantee performance stability.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and significant current capacity are required in a single package. The 13 MHz transition frequency supports moderate-speed switching needs. Consider the TO-220 form factor for applications where board space allows for larger packages but requires superior heat sinking capabilities compared to surface-mount alternatives.

Single Bipolar Transistors Part Context

This part belongs to onsemi's lineup of high-speed, high-gain bipolar transistors. It integrates the collector-emitter structure to enhance efficiency. The device is designed for demanding environments, offering reliability in power conversion and signal amplification tasks where standard transistors may fail due to voltage or current stress limitations.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for compatible NPN transistors with similar voltage and current ratings. Verify pinout compatibility before replacing to avoid circuit damage. Ensure thermal resistance characteristics match the existing heatsink design if direct replacement is intended.