BUT11ATU-ON

Single Bipolar Transistors Overview

The BUT11ATU-ON is an NPN silicon power transistor from onsemi, designed for high-voltage switching applications. It features a maximum collector-emitter voltage of 450 V and a continuous collector current rating of 5 A. The device is housed in a TO-220-3 through-hole package, suitable for board mounting. Key electrical characteristics include a maximum power dissipation of 100 W at case temperature of 25°C and a maximum operating junction temperature of +150°C. The component utilizes a single-element chip configuration within the specified physical dimensions.

Single Bipolar Transistors Feature Summary

• High voltage capability with 450 V collector-emitter breakdown
• Robust current handling with 5 A continuous collector current
• Through-hole TO-220-3 package for secure mechanical mounting
• Single NPN bipolar junction transistor element

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power supply output stages
• Industrial control systems requiring robust NPN switching

Single Bipolar Transistors Procurement Notes

Verify the exact part number suffix against the manufacturer's official documentation to ensure compatibility with specific thermal and electrical requirements. Confirm that the TO-220-3 package variant matches the intended PCB footprint and mounting constraints. Cross-reference the datasheet revision date to ensure access to the most current absolute maximum ratings and thermal characteristics provided by onsemi.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current switching capabilities. Ensure the thermal management solution can handle the 100 W dissipation rating under worst-case operating conditions. Verify that the drive circuitry can support the required base current for saturation without exceeding the device's limits. Consider the operating temperature range and derating curves for reliable performance in industrial environments.

Single Bipolar Transistors Part Context

The BUT11ATU-ON belongs to the family of NPN silicon power transistors manufactured by onsemi. These devices are engineered for general-purpose high-voltage switching tasks. The product line emphasizes reliability and performance in power electronics applications. The specific model integrates standard bipolar junction transistor architecture optimized for through-hole assembly methods commonly used in durable electronic equipment.

Single Bipolar Transistors Replacement Considerations

Consult onsemi's official substitution guide or equivalent manufacturer datasheets for direct replacements. Verify that any substitute part maintains identical pinout configuration, voltage ratings, and package dimensions. Ensure thermal resistance characteristics match the original design specifications to prevent overheating.