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CY62147EV30LL-45ZSXA is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 4MBIT PARALLEL 44TSOP II. Review the specifications below when checking this part for your BOM.
The CY62147EV30LL-45ZSXA is a 2-Mbit (256K x 8) CMOS synchronous static RAM manufactured by Infineon Technologies. It operates at a maximum clock frequency of 133 MHz and features a 45 ns access time. The device utilizes a 3.3V VCC supply voltage and includes an on-die termination (ODT) for improved signal integrity. It is housed in a 54-ball FBGA package with a 10 mm x 10 mm footprint, designed for high-performance embedded memory applications requiring low power consumption and fast data throughput.
Verify the specific suffix 'ZSXA' against the manufacturer's current datasheet to confirm package type and RoHS compliance status. Ensure that the required operating temperature range matches your application environment. Cross-reference the part number with official Infineon distributors to avoid counterfeit components. Confirm pin compatibility if replacing older versions of the CY62147 series.
Select this component when synchronous SRAM performance is required over asynchronous alternatives. Consider the 133 MHz clock speed and 45 ns access time for timing-critical designs. Evaluate the 54-ball FBGA package constraints for PCB layout. Compare power dissipation requirements against available cooling solutions. Verify voltage levels match the system's 3.3V logic standards.
This part belongs to the CY62147EV30LL family of 2-Mbit synchronous SRAMs. It shares architectural similarities with other members of the series but differs in package configuration and specific electrical characteristics defined by the suffix. The EV30LL designation indicates specific voltage and temperature grades within the broader product line.
Direct replacements include other CY62147 variants with compatible pinouts and electrical specs. Check for equivalent parts from other manufacturers offering synchronous SRAMs with similar capacity and speed. Ensure substitute parts support the same ODT and latency configurations.
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