DSS5160TQ-7

$0.49

Description：TRANS PNP 60V 1A SOT-23-3
Series：-

SKU:6ad73e4df70f Category: Single Bipolar Transistors Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DSS5160TQ-7 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS PNP 60V 1A SOT-23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for DSS5160TQ-7

Description：TRANS PNP 60V 1A SOT-23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：340mV @ 100mA, 1A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 1mA, 5V
Power - Max：725 mW
Frequency - Transition：150MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：Automotive
Qualification：AEC-Q101

Single Bipolar Transistors datasheet and documents for DSS5160TQ-7

DSS5160TQ-7

Single Bipolar Transistors Overview

The DSS5160TQ-7 is a PNP surface-mount transistor manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of -60 V, continuous collector current (IC) of -1 A, and peak pulse current (ICM) of -2 A. The device operates within a temperature range of -55°C to +150°C. Key electrical parameters include a collector-base breakdown voltage (BVCBO) of -80 V, emitter-base breakdown voltage (BVEBO) of -5 V, and transition frequency (fT) of 150 MHz. Power dissipation is rated at 725 mW.

Single Bipolar Transistors Feature Summary

Epitaxial planar die construction designed for medium power amplification and switching applications.
Qualified to AEC-Q101 standards for high reliability in automotive environments.
Compliant with RoHS directives and halogen-free manufacturing requirements.

Single Bipolar Transistors Applications

Automotive electronic circuits requiring high reliability components.
Medium power amplification systems.
General-purpose switching applications.

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '-7' against official Diodes Incorporated documentation to confirm reel size and tape width specifications. Ensure that the component meets all applicable environmental compliance standards required for your specific project implementation before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -60 V collector-emitter rating and -1 A continuous current capacity is required. Consider the SOT23 package dimensions and thermal resistance characteristics for adequate heat dissipation in the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to the DSS5160 series of low saturation voltage PNP transistors. It utilizes an epitaxial planar die construction suitable for surface mount technology. The product line is engineered to meet stringent automotive application requirements while maintaining standard bipolar junction transistor performance metrics.