Single FETs, MOSFETs FDB6690S product image

FDB6690S

$0.65
  • Description:MOSFET N-CH 30V 42A TO263AB
  • Series:PowerTrench®, SyncFET™
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:9518733c6754 Category: Brand:

  
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FDB6690S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 42A TO263AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDB6690S

  • Description:MOSFET N-CH 30V 42A TO263AB
  • Series:PowerTrench®, SyncFET™
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:15.5mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id:3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1238 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):48W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D2PAK)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for FDB6690S

FDB6690S

Single FETs, MOSFETs Overview

The FDB6690S is a 30V N-Channel PowerTrench SyncFET MOSFET designed for synchronous DC:DC power supplies. It integrates a Schottky diode using monolithic SyncFET technology to replace separate MOSFET and parallel diode configurations. Key electrical parameters include a drain-source voltage of 30V, continuous drain current of 42A, and typical gate charge of 11nC. The device offers low RDS(ON) values of 15.5mΩ at VGS=10V and 23.0mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Integrates a Schottky body diode via monolithic SyncFET technology
  • Optimized for high performance trench technology with extremely low RDS(ON)
  • Designed to maximize power conversion efficiency in synchronous rectifiers

Single FETs, MOSFETs Applications

  • Synchronous DC:DC power supplies
  • Low-side switching in synchronous rectifier circuits

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or onsemi. Confirm the package type matches TO-263AB (D2PAK). Ensure the datasheet revision aligns with Rev C specifications. Check for RoHS compliance status if required by specific project standards.

Single FETs, MOSFETs Selection Notes

Select this component when replacing discrete MOSFET and Schottky diode combinations. It is suitable for applications requiring low gate charge and fast switching speeds. Consider thermal resistance characteristics for heat dissipation requirements in compact designs.

Single FETs, MOSFETs Part Context

This part belongs to the FDP/FDB6690 series utilizing PowerTrench and SyncFET technologies. It serves as an alternative to standard MOSFETs like the FDP6035AL paired with external diodes. The product line focuses on enhancing efficiency in power conversion systems through integrated monolithic structures.

Single FETs, MOSFETs Replacement Considerations

The datasheet notes that its performance is indistinguishable from the FDP6035AL in parallel with a Schottky diode.

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