FDC5614P

$0.69

Description：MOSFET P-CH 60V 3A SUPERSOT6
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3febef6c4794 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FDC5614P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 60V 3A SUPERSOT6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDC5614P

Description：MOSFET P-CH 60V 3A SUPERSOT6
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：105mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：759 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SuperSOT™-6
Package / Case：SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for FDC5614P

FDC5614P

Single FETs, MOSFETs Overview

The FDC5614P is a P-Channel MOSFET from onsemi's PowerTrench series, packaged in a TSOT-23-6 (SUPERSOT-6) surface-mount housing. It features a -60 V drain-source voltage rating and supports a continuous drain current of -3 A. The device exhibits an on-resistance of 105 mΩ at VGS = -10 V and 135 mΩ at VGS = -4.5 V. Total gate charge is typically 15 nC at VGS = -10 V. Operating junction temperature ranges from -55°C to 150°C with maximum power dissipation of 1.6 W.

Single FETs, MOSFETs Feature Summary

Utilizes high-voltage PowerTrench process for extremely low on-resistance.
Optimized for fast switching speed and power management applications.
Features soft body diode characteristics suitable for synchronous rectification.

Single FETs, MOSFETs Applications

DC-DC Converters
Load Switch
Power Management

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision number against the manufacturer's official documentation before finalizing design specifications. Confirm that the TSOT-23-6 package dimensions align with the target PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-Channel solution is required for low-voltage power switching. The low gate charge facilitates efficient drive circuitry design. Verify that the application voltage does not exceed the -60 V breakdown limit and that thermal constraints are met within the -55°C to 150°C operating range.

Single FETs, MOSFETs Part Context

This part belongs to the PowerTrench family of MOSFETs designed by onsemi. These devices integrate advanced trench technology to minimize conduction losses while maintaining small physical footprints. The FDC5614P specifically targets portable electronics and battery-powered systems requiring efficient power distribution.

Single FETs, MOSFETs Replacement Considerations

Consult the official onsemi cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on pinout or voltage ratings without reviewing electrical parameter compatibility.