FQP6N60C

Single FETs, MOSFETs Overview

The FQP6N60C is a 600V N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It utilizes proprietary planar stripe and DMOS technology to achieve low on-state resistance and superior switching performance. The device features a TO-220 package with three pins, supporting continuous drain currents up to 5.5A at 25°C case temperature and pulsed currents of 22A. Key electrical parameters include a maximum drain-source voltage of 600V, a typical on-resistance of 2.0Ω at Vgs=10V, and a gate threshold voltage ranging from 3V to 6V. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe and DMOS technology for reduced on-state resistance
• Designed for high avalanche energy strength and robust switching performance
• Features an isolated TO-220 package suitable for through-hole mounting

Single FETs, MOSFETs Applications

• Switched mode power supplies (SMPS)
• Active power factor correction (PFC) circuits
• Electronic lamp ballasts

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the exact package variant, as suffixes such as TF or TM indicate different physical packages like DPAK or TO-220F. Ensure the component source matches the original Fairchild Semiconductor specifications, noting that Rochester Electronics may distribute surplus inventory of these parts. Confirm RoHS compliance status if required for the specific manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability combined with moderate current handling in a standard through-hole package. The 600V rating makes it suitable for universal AC input rectification stages. Consider thermal management requirements due to the 2.0Ω on-resistance at higher load currents compared to lower voltage alternatives.

Single FETs, MOSFETs Part Context

This part belongs to the QFET® series of power MOSFETs developed by Fairchild Semiconductor. The series is characterized by advanced planar technology tailored for efficient power conversion. Related variants include the FQPF6N60C in a TO-220F package and surface-mount versions like the FQD6N60C, offering flexibility in PCB layout and thermal design strategies.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the FQPF6N60C, which shares identical electrical characteristics but uses a TO-220F insulated tab package. Surface-mount equivalents such as the FQD6N60C provide similar performance in a DPAK form factor. Verify pinout compatibility and thermal dissipation capabilities when transitioning between package types.