Single FETs, MOSFETs FQPF11N40C product image

FQPF11N40C

  • Description:MOSFET N-CH 400V 10.5A TO220F
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tube

SKU:4104be86e08a Category: Brand:

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FQPF11N40C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 400V 10.5A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQPF11N40C

  • Description:MOSFET N-CH 400V 10.5A TO220F
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):400 V
  • Current - Continuous Drain (Id) @ 25°C:10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:530mOhm @ 5.25A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1090 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):44W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for FQPF11N40C

FQPF11N40C

Single FETs, MOSFETs Overview

The FQPF11N40C is an N-channel enhancement mode MOSFET from the QFET series, manufactured by onsemi. It features a 400V drain-source voltage rating and supports a continuous drain current of 10.5A at case temperatures of 25°C. The device utilizes proprietary planar stripe and DMOS technology to achieve a maximum on-resistance of 530mΩ at Vgs=10V. Key electrical parameters include a typical gate charge of 28nC and a power dissipation capacity of 135W at Tc=25°C. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-220 package.

Single FETs, MOSFETs Feature Summary

  • Utilizes proprietary planar stripe and DMOS technology for optimized performance
  • High avalanche energy strength with 100% avalanche testing verification
  • Low gate charge and feedback capacitance for enhanced switching efficiency
  • Lead-free construction compliant with RoHS standards

Single FETs, MOSFETs Applications

  • Switching mode power supplies
  • Active power factor correction circuits
  • Electronic lamp ballasts

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'F' against official datasheets to confirm package variations or material specifications. Confirm lead-free status and RoHS compliance requirements match project needs. Check for any recent product change notices regarding pinout or thermal characteristics before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust 400V blocking capability with moderate current handling. The low gate charge facilitates high-frequency operation, reducing driver losses. Ensure adequate heatsinking is provided to manage the 135W power dissipation rating effectively under continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the QFET family of power MOSFETs designed for general-purpose switching applications. It shares technological foundations with similar models like the FQP11N40C but may differ in packaging or specific thermal ratings. The series emphasizes reliability through rigorous avalanche testing protocols.

Single FETs, MOSFETs Replacement Considerations

The FQP11N40C is a direct functional equivalent within the same series. Verify pin compatibility and thermal resistance values when substituting with other 400V N-channel MOSFETs.

FQPF11N40CFQPF11N40C

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