G3F05MT12GB2

$200.09

Description：1200V 5M HALF-BRIDGE SICPAK G SI
Series：-

SKU:4a1b4ffd1943 Category: FET, MOSFET Arrays Brand: GeneSiC Semiconductor

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Product introduction

G3F05MT12GB2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 1200V 5M HALF-BRIDGE SICPAK G SI. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G3F05MT12GB2

Description：1200V 5M HALF-BRIDGE SICPAK G SI
Series：-
Mfr：GeneSiC Semiconductor
Package：Tray
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G3F05MT12GB2

G3F05MT12GB2

FET, MOSFET Arrays Overview

The G3F05MT12GB2 is a silicon carbide half-bridge MOSFET module from the SiCPAK G series. It features an N-channel configuration with a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 216 A. The device exhibits a typical on-resistance of 4.6 mOhms and operates within a temperature range of -40°C to +175°C. Packaged in a press-fit SiCPAK format measuring 65 mm by 56.7 mm, it includes thermal interface material for efficient heat dissipation.

FET, MOSFET Arrays Feature Summary

Utilizes silicon carbide technology for high-temperature operation up to 175°C
Integrates a half-bridge dual configuration within a compact SiCPAK package
Designed for press-fit mounting to ensure robust mechanical connection

FET, MOSFET Arrays Applications

High-frequency power conversion systems
Industrial motor drive inverters
Uninterruptible power supply (UPS) units

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation as GeneSiC Semiconductor or Navitas Semiconductor when sourcing. Confirm the specific suffix matches the standard tray packaging variant rather than the TIM-equipped tape-and-reel version. Ensure compatibility with press-fit assembly processes and validate thermal management requirements against the specified power dissipation limits.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low conduction losses and high switching speeds at 1200V ratings. Compare the 4.6 mOhm on-resistance against system efficiency targets. Evaluate the 216 A current capability relative to peak load demands. Consider the SiCPAK form factor for space-constrained designs requiring direct board mounting.

FET, MOSFET Arrays Part Context

This module belongs to the G3F series of silicon carbide power devices. It represents a transition toward higher integration levels compared to discrete TO-247 packages. The SiCPAK G series emphasizes reduced parasitic inductance and improved thermal performance through advanced packaging techniques tailored for modern power electronics.