HN1D01FU,LF(T

Diode Arrays Overview

The HN1D01FU,LF(T is a silicon epitaxial planar ultra-high-speed switching diode manufactured by Toshiba Semiconductor and Storage. It features an anode common configuration with two internal units. Key electrical characteristics include a maximum reverse voltage of 80 V, a typical forward voltage of 0.92 V at 100 mA, and a fast reverse recovery time of 1.6 ns. The device supports a total power dissipation of 200 mW and operates within a junction temperature range up to 150°C.

Diode Arrays Feature Summary

• Anode common dual unit structure for compact circuit integration
• Ultra-fast reverse recovery performance suitable for high-frequency applications
• Low forward voltage drop to minimize conduction losses
• Small total capacitance to reduce signal interference

Diode Arrays Applications

• High-speed switching circuits
• Automotive electronics systems
• General-purpose rectification in consumer devices

Diode Arrays Procurement Notes

Verify the specific ordering suffix requirements against the manufacturer's documentation to ensure compliance with environmental standards such as RoHS. Confirm that the selected package variant matches the intended thermal management strategy, as power dissipation ratings are based on specific mounting conditions on FR4 boards. Ensure all design parameters remain within absolute maximum ratings to maintain reliability.

Diode Arrays Selection Notes

Select this component when low forward voltage and rapid switching speeds are critical for system efficiency. The anode common topology simplifies circuit layout compared to discrete configurations. Evaluate the thermal environment carefully, as the power dissipation rating depends on the PCB copper pad area and board dimensions specified in the datasheet.

Diode Arrays Part Context

This part belongs to Toshiba's lineup of silicon epitaxial planar diodes designed for ultra-high-speed switching applications. It represents a specialized solution for modern electronic designs requiring fast response times and low power consumption in small surface-mount packages.

Diode Arrays Replacement Considerations

Consult official Toshiba documentation or authorized distributors for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' diodes without verifying pinout, voltage ratings, and recovery time specifications.

Diode Arrays FAQ

What is the typical reverse recovery time for this diode?

The typical reverse recovery time (trr) is 1.6 ns under standard test conditions.

How is the internal structure configured?

The device consists of two units connected in an anode common configuration.

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C for devices with the LF(T) ordering suffix.