IDW20G120C5BFKSA1

Diode Arrays Overview

The IDW20G120C5BFKSA1 is a dual anode common cathode Silicon Carbide Schottky diode from Infineon's 5th Generation CoolSiC™ series. It features a 1200 V repetitive peak reverse voltage and operates with a continuous forward current of 10 A per leg (20 A total) at a case temperature of 153°C. The device utilizes a PG-TO247-3 package, providing excellent thermal performance with a junction-to-case thermal resistance of 0.9 K/W per leg. It supports a maximum operating temperature of 175°C and exhibits no reverse recovery current.

Diode Arrays Feature Summary

• Silicon Carbide construction eliminates reverse recovery and forward recovery currents
• Temperature-independent switching behavior maintains low forward voltage at high temperatures
• Dual anode common cathode configuration in a single TO-247-3 package
• Specified dv/dt ruggedness for robust operation in high-speed switching applications

Diode Arrays Applications

• Solar inverters
• Uninterruptable power supplies
• Motor drives
• Power Factor Correction

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm packaging details and lead times. Confirm that the component meets RoHS compliance standards and Pb-free plating requirements. Ensure the application design accounts for the specified mounting torque and thermal management constraints defined in the datasheet.

Diode Arrays Selection Notes

Select this component for designs requiring high-frequency operation and increased power density compared to silicon alternatives. Consider the tight forward voltage distribution for balanced parallel operation. Evaluate the system-level benefits regarding reduced heatsink requirements and smaller magnetic components enabled by the superior thermal characteristics.

Diode Arrays Part Context

This device belongs to the IDW20G120C5B family within Infineon's 5th Generation CoolSiC™ portfolio. It represents an evolution in silicon carbide technology designed to improve system efficiency over traditional silicon diodes. The product line targets industrial power control applications demanding high reliability and extended surge current capability.

Diode Arrays Replacement Considerations

Direct replacements must match the 1200V rating, TO-247-3 package, and dual common cathode topology. Verify thermal resistance and forward voltage characteristics to ensure equivalent performance in existing circuit designs without modifying the PCB footprint.

Diode Arrays FAQ

Does the IDW20G120C5BFKSA1 exhibit reverse recovery charge?

No, as a Silicon Carbide Schottky diode, it has no reverse recovery current or forward recovery.

What is the maximum junction temperature for this device?

The maximum operating and storage temperature range is -55°C to 175°C.

Is this component qualified for automotive applications?

No, the product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.