IGB070S10S1XTMA1

$2.69

Description：MV GAN DISCRETES
Series：CoolGaN™
Mfr：Infineon Technologies
Package：Cut Tape (CT),Tube

SKU:de62fe1ea59f Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IGB070S10S1XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MV GAN DISCRETES. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IGB070S10S1XTMA1

Description：MV GAN DISCRETES
Series：CoolGaN™
Mfr：Infineon Technologies
Package：Cut Tape (CT),Tube
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：21A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：3.3mOhm @ 20A, 5V
Vgs(th) (Max) @ Id：2.9V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 5 V
Vgs (Max)：±6.5V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：3.3W (Ta), 45W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSON-4-2
Package / Case：4-PowerTDFN

Single FETs, MOSFETs datasheet and documents for IGB070S10S1XTMA1

IGB070S10S1XTMA1

Single FETs, MOSFETs Overview

The IGB070S10S1XTMA1 is a CoolGaN G3 transistor rated for 100 V drain-source voltage. It features a maximum continuous drain current of 38 A and an on-state resistance of 5.0 mΩ. The device has a total gate charge of 6.1 nC and an output charge of 25 nC. It utilizes a PG-TSON-4 package with an exposed die for thermal management.

Single FETs, MOSFETs Feature Summary

Ultra-fast switching capability combined with high efficiency
Zero reverse recovery charge for improved performance
Exposed silicon substrate on the top side for superior thermal dissipation

Single FETs, MOSFETs Applications

Telecom and datacenter 48V intermediate bus converters
Synchronous rectification for AC-DC and DC-DC converters
Robotics, drones, and battery-powered tools
Point-of-load converters in e-mobility systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XTMA1 to confirm reel packaging configuration. Ensure the component meets industrial grade requirements as specified by JEDEC validation standards. Confirm that the PG-TSON-4 package dimensions align with your PCB footprint design before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low gate charge and zero reverse recovery characteristics. The exposed die design supports efficient heat transfer from the top surface. Verify that the 100 V rating and 38 A current capacity meet the system's peak operational demands under varying thermal conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's CoolGaN G3 family of gallium nitride transistors. The series targets high-frequency power conversion needs. The G3 generation focuses on reducing switching losses while maintaining robust package reliability for demanding industrial environments.