IPD60R3K3C6

$0.50

Description：MOSFET N-CH 600V 1.7A TO252-3
Series：CoolMOS™ C6
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7adf48e564c9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPD60R3K3C6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 1.7A TO252-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPD60R3K3C6

Description：MOSFET N-CH 600V 1.7A TO252-3
Series：CoolMOS™ C6
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs：4.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：93 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：18.1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IPD60R3K3C6

IPD60R3K3C6

Single FETs, MOSFETs Overview

The IPD60R3K3C6 is a single N-channel CoolMOS C6 power transistor manufactured by Infineon Technologies. It features a 600 V drain-source voltage rating and a maximum on-resistance of 3.3 Ohms at 25°C. The device supports a continuous drain current of 1.8 A and a pulsed current of 7.2 A. It operates within a temperature range of -55°C to +150°C junction temperature, with a total power dissipation of 40 W in a DPAK-3 package.

Single FETs, MOSFETs Feature Summary

Utilizes CoolMOS C6 superjunction technology for optimized performance
Designed for high commutation ruggedness and low switching losses
Features lead-free plating and halogen-free mold compound

Single FETs, MOSFETs Applications

PFC stages
Hard-switching PWM stages
Resonant switching stages

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (Rev. 2.4) against your design requirements. Confirm that the DPAK-3 package dimensions align with your PCB footprint. Ensure thermal management strategies account for the specified power dissipation limits under expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 600V rating is required alongside moderate current handling capabilities. The low gate charge facilitates efficient driving in high-frequency applications. Consider the thermal resistance characteristics for proper heatsinking or board layout planning.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS C6 family, which employs superjunction principles to minimize figure-of-merit values. It targets cost-sensitive consumer and lighting markets while maintaining high efficiency standards typical of advanced silicon MOSFETs.