IRFC130NB

Description：MOSFET 100V 17A DIE
Series：HEXFET®
Mfr：Infineon Technologies
Package：Bulk

SKU:19aae80f263d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFC130NB is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 100V 17A DIE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFC130NB

Description：MOSFET 100V 17A DIE
Series：HEXFET®
Mfr：Infineon Technologies
Package：Bulk
FET Type：-
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：17A
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：90mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

Single FETs, MOSFETs datasheet and documents for IRFC130NB

IRFC130NB

Single FETs, MOSFETs Overview

The IRFC130NB is a single N-channel MOSFET die manufactured by Infineon Technologies. It features a 100V drain-to-source voltage rating and supports a continuous drain current of 17A at 25°C. The component utilizes HEXFET technology and is supplied as a bare die on a wafer, suitable for surface mount integration. Key electrical parameters include a maximum on-resistance of 42mΩ at 25°C and a gate charge of 50nC.

Single FETs, MOSFETs Feature Summary

HEXFET technology for high-performance switching
Bare die format for custom packaging integration
N-channel configuration with 100V voltage class

Single FETs, MOSFETs Applications

High-voltage power conversion circuits
Custom discrete semiconductor assemblies
Surface mount power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific wafer lot and die size requirements before ordering. Confirm that the receiving facility has the capability to handle bare die components. Ensure compatibility with the intended substrate or package assembly process. Check for any specific handling instructions regarding electrostatic discharge protection during storage and installation.

Single FETs, MOSFETs Selection Notes

Select this component when a bare die solution is required for space-constrained or high-density power applications. Consider the thermal management capabilities of the final assembly, as heat dissipation depends on the mounting substrate. Evaluate the 17A current rating against the peak load requirements of the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family of single FETs. It is designed for applications requiring robust power switching in a minimal footprint. The bare die format allows system integrators to optimize the mechanical and thermal interface directly with the application board or carrier.