IRFR420T

Single FETs, MOSFETs Overview

The IRFR420T is a single N-channel power MOSFET manufactured by Fairchild Semiconductor. It utilizes silicon technology and operates in enhancement mode within a TO-252AA (DPAK) surface-mount package. The device features a drain-source breakdown voltage of 500 V and supports a continuous drain current of 2.4 A. Key electrical characteristics include a maximum on-resistance of 3 ohms, a gate threshold voltage of 4 V, and a total gate charge of 19 nC. It handles a pulse drain current of 8 A with a power dissipation rating of 42 W. Switching performance includes an input capacitance of 1760 pF, reverse transfer capacitance of 240 pF, turn-on delay time of 33 ns, rise time of 8.6 ns, turn-off delay time of 40 ns, and fall time of 16 ns. The component operates between -55°C and +150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 500 V drain-source breakdown for robust operation in demanding circuits.
• Surface-mount DPAK packaging designed for efficient thermal management and automated assembly.
• Enhanced avalanche energy rating to withstand transient voltage spikes during switching events.

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring high-voltage isolation
• Motor control applications involving low-current loads
• General-purpose power switching systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as the IRFR420 series was originally developed by International Rectifier before being acquired by Infineon. Ensure the specific batch corresponds to Fairchild Semiconductor production if that origin is strictly required for your supply chain. Confirm RoHS compliance status and REACH SVHC declarations against the latest datasheet revision to meet regulatory standards. Validate the package marking and pinout configuration to prevent integration errors during PCB assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V rating is necessary but lower current handling than larger packages allows. The 3-ohm on-resistance suits applications where conduction losses are secondary to voltage blocking requirements. Consider the TO-252 footprint constraints and thermal resistance values relative to your heat sinking strategy. Evaluate the gate charge specifications against your driver capabilities to ensure adequate switching speeds without excessive drive current demands.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR series of N-channel power MOSFETs, which are widely used in industrial and consumer electronics. The series is characterized by its balance of voltage rating and on-resistance, optimized for cost-effective power solutions. While originally associated with International Rectifier, subsequent manufacturing may involve other entities following industry consolidations. The TO-252 package remains a standard form factor for medium-power surface-mount applications.

Single FETs, MOSFETs Replacement Considerations

• IRFR420TRPBF
• IRFR420TRRPBF

Single FETs, MOSFETs FAQ

What is the avalanche energy rating of the IRFR420T?

The device has an avalanche energy rating of 400 mJ, allowing it to handle specific transient energy stresses during switching operations.

How does the gate threshold voltage affect the IRFR420T operation?

With a typical gate threshold voltage of 4 V, the transistor begins to conduct significantly at this level, influencing the required gate drive voltage for full enhancement.