IRFR420TRR

Single FETs, MOSFETs Overview

The IRFR420TRR is a lead-free, third-generation N-Channel Power MOSFET from Vishay Siliconix, housed in a DPAK (TO-252) surface-mount package. It features a 500 V drain-source voltage rating and a maximum on-resistance of 3.0 Ω at VGS = 10 V. The device supports a continuous drain current of 2.4 A at 25 °C case temperature, with a pulsed current capability of 8.0 A. Key dynamic specifications include a total gate charge of 19 nC and a peak diode recovery dV/dt rating of 3.5 V/ns. Thermal resistance from junction to case is 3.0 °C/W.

Single FETs, MOSFETs Feature Summary

• Repetitive avalanche rated for ruggedized operation
• Optimized for fast switching performance
• Designed for ease of paralleling in power circuits

Single FETs, MOSFETs Applications

• Surface-mount power supply designs
• High-frequency switching applications
• General-purpose power control circuits

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering code includes the suffix -GE3 or PbF-BE3 to confirm compliance with Vishay's material categorization standards. Ensure the TRR suffix matches the required tape and reel packaging format for automated assembly processes. Cross-reference the document number 91275 for the latest revision status before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount N-Channel MOSFET with a 500 V breakdown voltage is required. The DPAK package suits applications where space constraints favor surface mounting over through-hole alternatives. Consider the 3.0 Ω RDS(on) limit for efficiency calculations under 10 V gate drive conditions. Evaluate thermal management requirements based on the 42 W maximum power dissipation rating at 25 °C case temperature.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR/IRFU/SiHFR/SiHFU series of third-generation power MOSFETs. The IRFR prefix denotes the lead-free DPAK variant, while the TRR suffix specifically indicates tape and reel packaging. This family emphasizes a balance between low on-resistance and fast switching speeds, targeting cost-effective power management solutions.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same datasheet include SiHFR420TRR-GE3 and IRFR420TRPbF-BE3, which share identical electrical characteristics and pinout configurations. Verify that any alternative maintains the DPAK (TO-252) footprint and equivalent thermal resistance ratings for direct board replacement.