IRFU4105ZTRL

Description：MOSFET N-CH 55V 30A TO251AA
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:2c6cc7ee1131 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFU4105ZTRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 55V 30A TO251AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFU4105ZTRL

Description：MOSFET N-CH 55V 30A TO251AA
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：48W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-251AA
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRFU4105ZTRL

IRFU4105ZTRL

Single FETs, MOSFETs Overview

The IRFU4105ZTRL is an N-channel HEXFET Power MOSFET in a TO-251AA (I-Pak) package. It features a 55V drain-source breakdown voltage and a maximum on-resistance of 24.5mΩ at VGS=10V. The device supports a continuous drain current of 30A at 25°C case temperature and operates up to a junction temperature of 175°C. Key electrical parameters include a gate threshold voltage of 2.0V to 4.0V, total gate charge of 18nC typ., and fast switching times with a turn-on delay of 10ns and rise time of 40ns.

Single FETs, MOSFETs Feature Summary

Advanced process technology enables ultra-low on-resistance per silicon area for high efficiency.
Designed specifically for automotive applications with improved repetitive avalanche rating.
Supports operation up to a 175°C junction temperature for enhanced thermal reliability.

Single FETs, MOSFETs Applications

Automotive power management systems
Low voltage DC-DC converters
Synchronous rectification circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TRL' against the manufacturer's official documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the I-Pak outline dimensions provided in the datasheet. Confirm RoHS compliance status through the latest product change notices or official supplier declarations before integration.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring high current handling and fast switching speeds. The 55V rating suits 12V or 24V automotive systems. Consider the 24.5mΩ maximum RDS(on) for conduction loss calculations. Verify that the thermal impedance characteristics align with the system's heat dissipation requirements.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR/IRFU4105Z family of HEXFET Power MOSFETs from Vishay Siliconix (formerly International Rectifier). The IRFU variant utilizes the I-Pak (TO-251AA) surface-mount package, offering a compact solution compared to the DPAK version. It is designed as an automotive-grade device utilizing advanced processing techniques.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's cross-reference tools for parametrically similar parts. Verify pinout compatibility and thermal resistance values when substituting. Ensure any replacement meets the same automotive qualification standards and voltage/current ratings.