IV1Q12080T4Z

Single FETs, MOSFETs Overview

The IV1Q12080T4Z is an automotive-grade Silicon Carbide (SiC) MOSFET manufactured by Inventchip, designed for high-efficiency power conversion. It features a 1200V drain-source voltage rating and a maximum on-resistance of 100mΩ at VGS=20V and ID=10A. The device supports a continuous drain current of 42A at 25°C case temperature and handles a pulsed current of 70A. Operating within a junction temperature range of -55°C to 175°C, it utilizes a TO-247-4 package with a thermal resistance from junction to case of 0.5°C/W.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• Kelvin gate input configuration to simplify driver circuit design
• Robust intrinsic body diode with fast reverse recovery characteristics
• High operating junction temperature capability up to 175°C

Single FETs, MOSFETs Applications

• On-board chargers
• Automotive compressor inverters
• Automotive DC/DC converters
• Solar inverters
• Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T4Z against official Inventchip documentation to confirm package type and marking details. Ensure that the procurement channel provides valid traceability data consistent with AEC-Q101 qualification requirements. Cross-reference the datasheet revision date to confirm technical specifications match the delivered component batch.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring high blocking voltage combined with low conduction losses in a TO-247 form factor. The Kelvin source connection is critical for minimizing switching noise and ensuring accurate gate drive control. Consider the thermal resistance of 0.5°C/W for heatsink sizing calculations to maintain junction temperatures within the specified 175°C limit under continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's automotive SiC MOSFET portfolio, specifically engineered for electric vehicle and industrial power applications. The TO-247-4 package facilitates robust mounting and efficient heat dissipation compared to surface-mount alternatives. Its qualification aligns with industry standards for harsh environment operation, distinguishing it from general-purpose industrial variants.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 1200V rating, 80mΩ minimum Rds(on), and TO-247-4 pinout. Verify that any alternative component also holds AEC-Q101 certification if used in automotive contexts. Check compatibility of gate charge and threshold voltage parameters to ensure existing driver circuits function correctly without modification.

Single FETs, MOSFETs FAQ

What is the recommended gate drive voltage range?

The recommended turn-on voltage is 20±0.5V, and the recommended turn-off voltage is between -3.5V and -2V.

How does the on-resistance change at high temperatures?

At TJ=175°C, the static drain-source on-resistance increases to a maximum of 130mΩ at VGS=20V and ID=10A.

What are the absolute maximum ratings for gate-source voltage?

The maximum DC gate-source voltage is -5V to 22V, while the maximum spike voltage is -10V to 25V with a duty cycle less than 1% and pulse width under 200ns.