IV1Q12750T3

$4.58

Description：SIC MOSFET, 1200V 750MOHM, TO247
Series：-
Mfr：Inventchip
Package：Tube

SKU:9a33ce471aee Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV1Q12750T3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is SIC MOSFET, 1200V 750MOHM, TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV1Q12750T3

Description：SIC MOSFET, 1200V 750MOHM, TO247
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：900mOhm @ 1.5A, 20V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：15.8 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：260 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：78.4W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IV1Q12750T3

IV1Q12750T3

Single FETs, MOSFETs Overview

The IV1Q12750T3 is a Silicon Carbide (SiC) MOSFET manufactured by Inventchip, designed for high-voltage power applications. It features a 1200V drain-source voltage rating and a maximum on-resistance of 900mΩ at 25°C. The device operates with a continuous drain current of 6.8A at 25°C case temperature and supports a pulsed current of 13.6A. Key electrical parameters include a total gate charge of 15.8nC and an operating junction temperature range from -55°C to 175°C. It utilizes a TO-247-3 through-hole package.

Single FETs, MOSFETs Feature Summary

High blocking voltage capability combined with low on-resistance
Fast switching performance supported by low capacitance values
Robust intrinsic body diode with fast reverse recovery characteristics
High operating junction temperature capability up to 175°C

Single FETs, MOSFETs Applications

Solar inverters
Uninterruptible Power Supplies (UPS)
Motor drivers
High voltage DC/DC converters
Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T3 against official Inventchip documentation to confirm package type and pin configuration. Ensure thermal management solutions align with the specified thermal resistance and power dissipation limits. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into manufacturing processes.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency in high-voltage environments. Evaluate thermal constraints carefully as continuous current ratings decrease significantly at elevated case temperatures. Consider the gate drive voltage requirements and switching energy losses when designing the driver circuitry for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's Silicon Carbide MOSFET portfolio, focusing on wide-bandgap semiconductor technology. The company specializes in SiC power devices and gate driver ICs. This specific model targets high-performance power conversion systems where reduced switching losses and higher temperature operation are critical design factors.