IXFH76N15T2

Single FETs, MOSFETs Overview

The Littelfuse IXFH76N15T2 is a Gen2 Series N-Channel Trench Gate MOSFET utilizing HiPerFET technology. It features a drain-source breakdown voltage (VDSS) of 150 V and a maximum continuous drain current (ID) of 76 A at case temperature of 25°C, with high current capabilities up to 600 A under specific thermal conditions. The device exhibits a typical on-resistance (RDS(on)) of 22 mΩ. Key switching parameters include a fall time of 14 ns and a rise time of 19 ns. It offers a minimum forward transconductance of 50 S and supports avalanche functionality for robust operation.

Single FETs, MOSFETs Feature Summary

• High current performance capability up to 600 Amperes under specified thermal conditions
• Low on-resistance and gate charge characteristics for improved power switching efficiency
• Integrated avalanche functionality for enhanced ruggedness in inductive load applications

Single FETs, MOSFETs Applications

• Power supply switching circuits
• Inductive load control systems
• DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix 'T2' corresponds to the required tape-and-reel packaging configuration. Confirm that the thermal management design accounts for the 76 A continuous rating at 25°C case temperature versus the higher pulsed currents. Ensure the application voltage remains within the 150 V drain-source limit to prevent breakdown.

Single FETs, MOSFETs Selection Notes

Select this component when a 150 V N-Channel MOSFET with low RDS(on) and high current handling is required. The Gen2 Trench Gate technology provides superior switching speeds compared to standard plansar devices. Consider the package thermal resistance if operating near the 76 A continuous limit without adequate heatsinking.

Single FETs, MOSFETs Part Context

This part belongs to the Littelfuse IXYS IXFH series, specifically the Gen2 lineup of N-Channel Trench Gate MOSFETs. These devices are designed for high-efficiency power conversion applications requiring low conduction losses and fast switching times. The series spans various voltage ratings from 40V to 170V.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 150V N-Channel MOSFETs with similar RDS(on) and current ratings from the same manufacturer's Gen2 portfolio, such as the IXFP or IXFA variants if pin compatibility differs. Verify electrical parameters against the original datasheet before substitution.