IXFT6N100Q

Single FETs, MOSFETs Overview

The IXFT6N100Q is a silicon N-channel power MOSFET manufactured by IXYS. It features a TO-268 (D2PAK) surface-mount package with three terminals. The device provides a drain-source breakdown voltage of 1000V and supports a continuous drain current of 6A. Its maximum drain-source on-resistance is specified at 3.5 ohms. The component operates within a temperature range from -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• High-voltage capability for robust operation in demanding electrical environments
• Surface-mount construction for automated assembly integration
• Enhanced avalanche rating for improved ruggedness under transient conditions

Single FETs, MOSFETs Applications

• High-voltage switching circuits
• Power supply output stages
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer datasheet for exact thermal resistance values and gate charge specifications before finalizing the design. Confirm that the TO-268 footprint matches the target PCB layout dimensions. Ensure the selected supplier provides traceable documentation confirming the component origin and RoHS compliance status.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage, low-current surface-mount solution is required. Compare the 3.5 ohm on-resistance against alternative packages like TO-247 if lower conduction losses are critical. Evaluate the thermal performance based on the specific PCB copper area available for heat dissipation during continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS high-voltage MOSFET portfolio designed for general-purpose power switching. It utilizes standard silicon planar technology. The TO-268 package offers a balance between current handling capacity and compact board space utilization compared to through-hole alternatives.