IXTA72N20T

Single FETs, MOSFETs Overview

The IXTA72N20T is a power N-channel MOSFET manufactured by IXYS. It features a maximum drain current of 72 A and a minimum drain-source breakdown voltage of 200 V. The device has a maximum on-resistance of 0.035 ohms. It is housed in a TO-247 plastic package with three pins. The component is avalanche rated and includes a built-in diode.

Single FETs, MOSFETs Feature Summary

• High current handling capability for power switching applications
• Low on-resistance to minimize conduction losses
• Robust avalanche energy rating for rugged operation
• Integrated body diode for synchronous rectification

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control circuits
• Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer datasheet for the specific electrical characteristics and thermal resistance values. Confirm the package type matches the design requirements. Check for RoHS compliance status if required by the project specifications. Ensure the ordering suffix corresponds to the desired packaging format.

Single FETs, MOSFETs Selection Notes

Select this component based on the required current and voltage ratings. Consider the thermal management capabilities provided by the TO-247 package. Evaluate the on-resistance impact on overall system efficiency. Verify compatibility with the gate drive circuitry for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS power MOSFET portfolio, designed for high-efficiency power conversion. It utilizes silicon technology for reliable operation in demanding environments. The TO-247 package offers robust mechanical stability and efficient heat dissipation for high-power applications.