IXTA80N10T7

$1.19

Description：MOSFET N-CH 100V 80A TO263-7
Series：TrenchMV™
Mfr：IXYS
Package：Tube

SKU:c091de3aedba Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXTA80N10T7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 100V 80A TO263-7. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTA80N10T7

Description：MOSFET N-CH 100V 80A TO263-7
Series：TrenchMV™
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3040 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：230W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7 (IXTA)
Package / Case：TO-263-7, D2PAK (6 Leads + Tab)

Single FETs, MOSFETs datasheet and documents for IXTA80N10T7

IXTA80N10T7

Single FETs, MOSFETs Overview

The IXTA80N10T7 is a single N-channel Power MOSFET manufactured by IXYS. It features a drain-source voltage rating of 100V and a continuous drain current capacity of 80A. The device utilizes Trench Gate technology for enhanced performance. It is housed in a TO-263-7 (D2PAK) package, designed for surface-mount applications requiring high power density.

Single FETs, MOSFETs Feature Summary

Utilizes IXYS Trench Gate technology for optimized switching characteristics
Rated for Unclamped Inductive Switching (UIS) events
Designed for high-efficiency power conversion applications

Single FETs, MOSFETs Applications

DC-DC converters
Motor control circuits
Power supply units

Single FETs, MOSFETs Procurement Notes

Verify the obsolete status of this specific part number before procurement planning. Confirm availability of direct substitutes or updated series equivalents from the manufacturer. Ensure that any replacement component matches the original pinout and thermal requirements to maintain system integrity without redesign.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 100V blocking capability with high current handling in a surface-mount format. Consider the TO-263-7 package constraints for PCB layout and thermal management. Evaluate the trade-off between conduction losses and switching speed inherent to Trench Gate technology for the specific application frequency.

Single FETs, MOSFETs Part Context

This component belongs to the IXYS Power MOSFET family, specifically the IXTA series characterized by robust avalanche ratings and standard international packaging. It represents a legacy product line often superseded by newer generations with improved figure-of-merit metrics.