JANTXV2N3440UA

Single Bipolar Transistors Overview

The JANTXV2N3440UA is a high-voltage NPN silicon power bipolar junction transistor (BJT) manufactured by Microchip Technology. Designed for rugged environments, it features a collector-emitter voltage (VCEO) of 250 V and a collector-base voltage (VCBO) of 300 V. The device supports a continuous DC collector current of 1 A with a maximum power dissipation of 800 mW. It operates within an extended temperature range from -65 °C to +200 °C. Packaged in the U4-3 surface-mount format, it provides a DC current gain (hFE) ranging from 40 to 160 at 20 mA and 10 V.

Single Bipolar Transistors Feature Summary

• High-voltage capability with 250 V collector-emitter breakdown
• Extended thermal stability up to 200 °C junction temperature
• Radiation-hardened design suitable for aerospace applications
• Surface-mount construction for automated assembly

Single Bipolar Transistors Applications

• Aerospace switching circuits
• Military power regulation systems
• High-reliability amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'U4' confirms the U4-3 SMD package variant. Confirm radiation hardness level requirements match mission profiles. Validate RoHS exemption status if applicable. Ensure ordering documentation specifies the JANTXV quality tier for guaranteed performance parameters.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and extreme temperature tolerance are required in a compact surface-mount form factor. Compare against through-hole TO-39 variants if board space permits lower cost options. Verify that the 800 mW power dissipation rating aligns with thermal management capabilities of the target PCB layout.

Single Bipolar Transistors Part Context

This part belongs to the 2N3440 family of high-voltage NPN transistors. The JANTXV designation indicates a screened military/aerospace grade version with enhanced reliability testing compared to standard commercial equivalents. It serves as a specialized alternative to general-purpose high-voltage BJTs in critical systems.

Single Bipolar Transistors Replacement Considerations

Direct pin-compatible substitutes include the JANTX2N3440 (through-hole) and 2N3440U4 (standard commercial SMD). Verify electrical parameter margins before substitution in radiation-sensitive designs.