KSB772OS

Single Bipolar Transistors Overview

The KSB772OS is a PNP bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 30 V and a continuous collector current of 3 A. The device has a maximum power dissipation of 1 W and a transition frequency of 80 MHz. It utilizes a TO-126-3 through-hole package. The DC current gain (hFE) is specified at a minimum of 160 under test conditions of 1 A collector current and 2 V collector-emitter voltage.

Single Bipolar Transistors Feature Summary

• PNP single transistor configuration for switching applications
• Through-hole mounting in TO-126-3 package
• High DC current gain capability

Single Bipolar Transistors Applications

• General purpose switching circuits
• Power management modules
• Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix OS against official datasheets to confirm pinout and electrical tolerances match design requirements. Confirm RoHS compliance status as manufacturing processes may vary. Check for obsolescence notices or last-time buy notifications from onsemi before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a 30 V, 3 A PNP transistor with through-hole mounting is required. Ensure the application operates within the 1 W power dissipation limit. Verify that the 80 MHz transition frequency meets the circuit speed requirements. Compare hFE specifications against load drive needs.

Single Bipolar Transistors Part Context

The KSB772 series belongs to onsemi's lineup of general-purpose power transistors. These devices are designed for robust performance in medium-power applications. The TO-126 package provides thermal stability for through-hole implementations. This series supports various industrial and consumer electronics designs requiring reliable PNP switching.

Single Bipolar Transistors Replacement Considerations

KSB772YS is documented as a similar substitute part number available from onsemi.