KSC2335R

Single Bipolar Transistors Overview

The KSC2335R is an NPN epitaxial silicon transistor designed for high-speed, high-voltage switching applications. It features a collector-base voltage of 500 V and a collector-emitter voltage of 400 V. The device supports a continuous DC collector current of 7 A and a pulsed collector current of 15 A. Thermal dissipation capabilities reach 40 W at a case temperature of 25°C. The component utilizes a TO-220 package with three pins and operates within a junction temperature range up to 150°C.

Single Bipolar Transistors Feature Summary

• Engineered for high-speed switching operations in industrial environments
• Capable of handling high voltage levels suitable for demanding power circuits
• Provides robust current carrying capacity for heavy-duty applications

Single Bipolar Transistors Applications

• Industrial switching circuits
• High voltage power control systems
• Fast switching power supplies

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer origin, as the datasheet indicates Fairchild Semiconductor while the brand is onsemi. Confirm the exact suffix designation matches the required specifications. Ensure the component meets all necessary safety standards for the intended application environment before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when high voltage blocking capability and rapid switching speeds are required. Consider the thermal management requirements given the 40 W dissipation rating. Evaluate the hFE classification options to ensure adequate gain for the specific drive conditions of the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to the KSC2335 series of NPN transistors. It shares similar electrical characteristics with other variants in the family but may differ in packaging or specific gain classifications. The device represents a standard solution for general-purpose high-power switching tasks in industrial electronics.

Single Bipolar Transistors Replacement Considerations

KSC2335Y

Single Bipolar Transistors FAQ

What is the maximum collector-emitter sustaining voltage?

The collector-emitter sustaining voltage is specified at 400 V under defined test conditions.

Does the device support pulsed operation?

Yes, the transistor supports a pulsed collector current of 15 A with a pulse width of 300µs and a duty cycle of 10%.

What is the typical turn-on time?

The turn-on time is typically 1 µs under standard test conditions.