MA3X704E0L

Diode Arrays Overview

The MA3X704E0L is a silicon epitaxial planar Schottky Barrier Diode (SBD) designed for switching and wave detection applications. It contains two diodes in one package with a 30 V reverse voltage rating and a peak forward current of 150 mA. The device features low forward voltage, small temperature coefficient, and minimal reverse current. Key electrical parameters include a maximum reverse current of 1 µA at 30 V, terminal capacitance of 1.5 pF at 1 MHz, and a junction temperature range up to 125 °C.

Diode Arrays Feature Summary

• Contains two diodes within a single Mini3-G1 package
• Optimized for high-efficiency wave detection
• Low forward voltage characteristics
• Minimal reverse leakage current

Diode Arrays Applications

• High-frequency switching circuits
• Wave detection systems
• General electronic equipment
• Communications equipment

Diode Arrays Procurement Notes

Verify the specific suffix '0L' against official Panasonic documentation to confirm availability and lifecycle status. Confirm that the component meets RoHS Directive requirements for your region. Ensure static discharge precautions are observed during handling due to sensitivity. Check for any planned maintenance or discontinuation notices on the manufacturer's website before finalizing procurement plans.

Diode Arrays Selection Notes

Select this component when dual Schottky diodes are required in a compact SMD footprint. The low terminal capacitance makes it suitable for RF applications. Consider the 30 V reverse voltage limit and 125 °C junction temperature for thermal management. Verify compatibility with standard SC-59/SOT-23-3 mounting processes.

Diode Arrays Part Context

This part belongs to the MA3X704 series of silicon epitaxial planar Schottky Barrier Diodes manufactured by Panasonic Electronic Components. The series includes variants like MA3X704D and MA3X704E, distinguished by internal connection configurations. These devices are designed for general-purpose electronics and communications equipment, offering a balance of performance and size in the Mini3-G1 package.

Diode Arrays Replacement Considerations

Check for direct equivalents such as the MA3X704D variant, which shares similar electrical ratings but may differ in internal pinout configuration. Verify that any substitute maintains the 30 V reverse voltage and low capacitance specifications required for wave detection applications.

Diode Arrays FAQ

What is the difference between MA3X704D and MA3X704E?

The primary difference lies in their internal connection configurations. MA3X704D connects pins 1 and 2 as cathodes with pin 3 as anode, while MA3X704E connects pins 1 and 2 as anodes with pin 3 as cathode.

What is the typical detection efficiency of this diode?

The detection efficiency is typically 65% under specific test conditions: VIN = 3 V (peak), f = 30 MHz, RL = 3.9 kΩ, and CL = 10 pF.

Is this component suitable for aerospace applications?

No. The datasheet explicitly states that these products are intended for standard applications or general electronic equipment. Special applications requiring exceptional quality and reliability, such as aerospace, require consultation with sales staff.