RF Diode MA4P606-258 product image

MA4P606-258

$95.52
  • Description:RF DIODE PIN 1000V 20W
  • Series:-

SKU:c3f81bd69c6e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MA4P606-258 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE PIN 1000V 20W. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MA4P606-258

  • Description:RF DIODE PIN 1000V 20W
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):1000V
  • Current - Max:-
  • Capacitance @ Vr, F:0.8pF @ 100V, 1MHz
  • Resistance @ If, F:700mOhm @ 100mA, 100MHz
  • Power Dissipation (Max):20 W
  • Operating Temperature:-65°C ~ 175°C
  • Package / Case:Stud
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MA4P606-258

MA4P606-258

RF Diode Overview

The MA4P606-258 is a packaged silicon PIN diode designed for high-power RF applications. It features a minimum reverse voltage of 1000 V and a maximum capacitance of 0.8 pF at -10 V, 1 MHz. The device exhibits a maximum series resistance of 0.7 Ω at 10 mA, 100 MHz, with a nominal carrier lifetime of 4 µs and an I-region width of 95 µm. It utilizes the CERMACHIP process for hermetic sealing and is housed in the ODS-258 package style.

RF Diode Feature Summary

  • High power handling capability suitable for environments with high level RF voltages
  • Hermetically sealed hard glass encapsulation protecting the active chip area
  • Fast switching performance enabled by controlled carrier lifetime

RF Diode Applications

  • High power RF attenuator circuits
  • RF microwave switching applications
  • Military screened circuit designs

RF Diode Procurement Notes

Verify the specific ordering suffix to confirm the package style matches the design requirements. Confirm RoHS compliance status and check for available military screening options if required for the application environment. Ensure thermal management aligns with the absolute maximum ratings provided in the datasheet.

RF Diode Selection Notes

Select this component when a high reverse voltage rating of 1000 V is required alongside moderate switching speeds. The 0.7 Ω series resistance and 0.8 pF capacitance define the insertion loss and isolation characteristics. Verify that the ODS-258 package parasitic capacitance is compatible with the target frequency range.

RF Diode Part Context

This part belongs to MACOM's broad line of packaged PIN diodes, specifically within the 1000 V CERMACHIP product line. These devices utilize a silicon oxide or glass passivated chip bonded into sealed ceramic packages designed for stringent electrical and environmental conditions.

RF Diode Replacement Considerations

The MA4P604-258 offers similar specifications but with a lower maximum series resistance of 1.0 Ω and different carrier lifetime characteristics. The MA4P607-258 provides higher current handling capabilities with a 2.0 pF capacitance.

MA4P606-258MA4P606-258
$95.52
Buy Now

Recent News