MBR12080CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR12080CT is a silicon power Schottky diode module featuring a Twin Tower package. It provides an average forward current of 120 A per leg and supports repetitive peak reverse voltages up to 100 V. The device exhibits a maximum forward voltage of 0.80 V at Tj = 150 °C and handles a peak forward surge current of 800 A. Thermal resistance from junction to case is 0.80 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

• High surge current capability for robust transient handling
• Electrically isolated base plate design
• Not ESD sensitive construction

Diode Arrays Applications

• Low voltage high frequency inverters
• Free wheeling applications
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix designation against official documentation, as it may indicate variations such as reversed leads or packaging types. Confirm thermal interface requirements and mounting torque specifications prior to integration. Ensure component authenticity through authorized distribution channels to maintain reliability standards in power conversion systems.

Diode Arrays Selection Notes

Select this module for designs requiring high current density and low forward voltage drop in compact footprints. Evaluate thermal management strategies based on the specified junction-to-case resistance. Consider the operating temperature range when determining derating factors for continuous operation under varying load conditions.

Diode Arrays Part Context

This component belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series encompasses various voltage ratings from 45 V to 100 V within the same Twin Tower package family, allowing for standardized mechanical layouts across different voltage requirements.

Diode Arrays Replacement Considerations

Direct substitutes include other MBR120xxCT variants with matching current ratings but different voltage capabilities. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers' modules with similar form factors.

Diode Arrays FAQ

What is the thermal resistance value for the MBR12080CT?

The thermal resistance from junction to case is 0.80 °C/W per leg.

Is the MBR12080CT sensitive to electrostatic discharge?

No, the device is not ESD sensitive.

What is the peak forward surge current rating?

The peak forward surge current is 800 A for an 8.3 ms half-sine wave pulse.