MBR2035CT

Diode Arrays Overview

The MBR2035CT is a dual common-cathode Schottky barrier rectifier manufactured by Diodes Incorporated. It features a silicon construction housed in a TO-220-3 through-hole package. The device supports a continuous forward current of 20 A and a repetitive peak reverse voltage of 35 V. Key electrical characteristics include a maximum forward voltage drop of 840 mV at rated current, a surge forward current capability of 150 A, and a maximum reverse leakage current of 100 uA. It operates within a temperature range of -65°C to +160°C junction temperature.

Diode Arrays Feature Summary

• Dual common-cathode configuration for center-tapped or full-wave applications
• Guard ring structure provides protection against transient overvoltage conditions
• Low forward voltage drop design minimizes power loss and enhances efficiency
• High thermal stability suitable for demanding operating environments

Diode Arrays Applications

• Free-wheeling diodes in switching power supplies
• Polarity protection circuits
• Low voltage high frequency inverters
• DC-to-DC converters

Diode Arrays Procurement Notes

Verify the manufacturer designation on the component marking, as the part number MBR2035CT is widely used by multiple semiconductor producers including onsemi and Vishay. Confirm that the specific unit received matches the Diodes Incorporated specification sheet regarding pinout orientation and thermal characteristics. Ensure the package type corresponds to the required TO-220-3 form factor for your PCB layout.

Diode Arrays Selection Notes

Select this component when a dual Schottky rectifier with a 35 V rating and 20 A continuous current capacity is required. The low forward voltage drop makes it suitable for improving efficiency in low-voltage output stages. Consider the TO-220-3 package for applications requiring direct heatsinking or robust mechanical mounting via the central tab.

Diode Arrays Part Context

This component belongs to the broader category of Schottky barrier rectifiers designed for high-efficiency power conversion. Unlike standard PN junction diodes, Schottky devices utilize metal-semiconductor junctions to achieve faster switching speeds and lower conduction losses. The dual common-cathode arrangement allows for simplified circuit designs in bridge-less PFC or synchronous rectification topologies.

Diode Arrays Replacement Considerations

Cross-reference with other manufacturers' equivalents such as the onsemi MBR2035CT or Vishay MBR2035CT. Verify that substitute parts maintain identical pin configurations, forward voltage specifications, and thermal resistance values to ensure compatibility without redesigning the heatsink or PCB footprint.

Diode Arrays FAQ

What is the maximum junction temperature for the MBR2035CT?

The maximum operating junction temperature is specified as +160°C.

Does the MBR2035CT include overvoltage protection features?

Yes, the device incorporates a guard ring structure designed to provide protection against transient overvoltage events.

What is the package type for this component?

The MBR2035CT is available in a TO-220-3 through-hole package.