MJ11032G

Single Bipolar Transistors Overview

The MJ11032G is a high-current NPN silicon power transistor manufactured by onsemi. It features a collector-emitter voltage of 120 Vdc and a continuous collector current rating of 50 Adc. The device supports a peak pulsed collector current of 100 A and offers a maximum total power dissipation of 300 W at a case temperature of 25 °C. It provides a minimum DC current gain (hFE) of 1000 at 25 Adc and 400 at 50 Adc. The component utilizes a TO-204 (TO-3) package with a junction-to-case thermal resistance of 0.58 °C/W and operates within a junction temperature range of -55 °C to +200 °C.

Single Bipolar Transistors Feature Summary

• Monolithic construction incorporating a built-in base-emitter shunt resistor for enhanced stability.
• High DC current gain capability designed for efficient drive requirements in general-purpose amplifier applications.
• Robust thermal performance supporting operation up to a junction temperature of +200 °C.

Single Bipolar Transistors Applications

• Output devices in complementary general purpose amplifier circuits
• High-current switching applications requiring robust saturation characteristics

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision, as the MJ11028/D document indicates this device family may be discontinued or rebranded. Confirm that the 'G' suffix denotes a lead-free package compliant with relevant environmental standards. Ensure the ordering information matches the required shipping configuration, such as tray quantities, before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select the MJ11032G when a 120 V collector-emitter breakdown voltage is required alongside a 50 A continuous current capacity. Consider its monolithic Darlington structure and integrated base-emitter shunt resistor for simplified driver design. Evaluate the thermal management requirements against the specified 0.58 °C/W junction-to-case resistance to ensure reliable operation within the +200 °C junction limit.

Single Bipolar Transistors Part Context

This component belongs to the High-Current Complementary Silicon Power Transistors series produced by onsemi. It serves as the NPN counterpart to the PNP MJ11033. The part is housed in a TO-204 (TO-3) package, which is standard for high-power discrete semiconductor devices requiring direct mounting to heat sinks for effective thermal dissipation.

Single Bipolar Transistors Replacement Considerations

The MJ11030 is a compatible alternative within the same family offering a 90 V collector-emitter voltage rating. Verify that the lower voltage specification meets the circuit requirements before substituting.