MJD42C-13

Single Bipolar Transistors Overview

The MJD42C-13 is a high-voltage NPN power transistor manufactured by Diodes Incorporated, belonging to the BJT product category. It utilizes silicon technology and is housed in a TO-252 surface-mount package with tape-and-reel or cut-tape shipping options. The component is designed for robust performance in power switching applications, featuring a maximum collector-emitter voltage (Vceo) of 80 V and a continuous collector current (Ic) of 8 A. With a power dissipation rating of 25 W at 25°C case temperature, it supports efficient thermal management in compact designs.

Single Bipolar Transistors Feature Summary

• High-voltage NPN bipolar junction transistor architecture
• Surface-mount TO-252 package for automated assembly
• Silicon-based construction for reliable operation

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Linear regulator output stages
• Driver circuits for loads requiring moderate current handling

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix and packaging configuration against official Diodes Incorporated documentation before procurement. Confirm that the component meets required RoHS compliance standards for your target market. Ensure that thermal design parameters align with the specified power dissipation limits under actual operating conditions. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and availability status.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80 V breakdown and 8 A continuous current capability is required in a TO-252 package. Consider its 25 W power dissipation rating relative to the available PCB copper area and heatsinking strategy. Evaluate the transition frequency and gain characteristics if high-speed switching or linear amplification is needed within the device's safe operating area.

Single Bipolar Transistors Part Context

This part is classified under Bipolar Junction Transistors (BJTs) within Diodes Incorporated's discrete semiconductor portfolio. It serves as a power transistor solution for applications demanding higher voltage and current ratings than standard small-signal transistors provide. The TO-252 form factor allows for direct surface mounting, facilitating integration into modern printed circuit board layouts without through-hole constraints.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides from Diodes Incorporated for verified equivalent parts. Ensure any replacement matches the NPN polarity, voltage/current ratings, and TO-252 package dimensions. Verify pinout compatibility to prevent circuit damage during installation.