MPSA26 TRE PBFREE

Single Bipolar Transistors Overview

The MPSA26 TRE PBFREE is a silicon NPN Darlington transistor manufactured by Central Semiconductor Corp using an epitaxial planar process. It is housed in a TO-92 through-hole package and designed for applications requiring extremely high current gain. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 500 mA, and a power dissipation (PD) of 625 mW at 25°C ambient temperature. The device features a minimum DC current gain (hFE) of 10,000 at IC=10mA or 100mA with VCE=5.0V. It operates within a junction temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• High current gain capability suitable for sensitive signal amplification
• Epitaxial planar construction for reliable performance
• Through-hole mounting configuration

Single Bipolar Transistors Applications

• High-gain amplifier circuits
• Switching applications requiring substantial drive current
• Driver stages for relays or motors

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm plating options. The 'TRE' designation indicates tape-and-reel packaging, while 'PBFREE' confirms lead-free compliance. Ensure procurement channels source directly from authorized distributors to guarantee component authenticity and adherence to environmental regulations specified in the datasheet.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs demand very high beta values without external compensation. Compare the 50 V collector-emitter rating against system voltage requirements. Consider the thermal resistance of 200 °C/W for heat dissipation planning. Verify that the TO-92 package dimensions fit the intended PCB layout constraints.

Single Bipolar Transistors Part Context

This part belongs to the MPSA26/MPSA27 family of NPN Darlington transistors produced by Central Semiconductor. The MPSA26 variant specifically provides a 50 V collector-emitter breakdown voltage, distinguishing it from the MPSA27 which offers 60 V. Both share identical pinouts and general characteristics but differ in maximum voltage ratings.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the NPN Darlington configuration, TO-92 package, and 50 V minimum VCEO rating. Verify equivalent hFE ranges and thermal characteristics before integration.