MSC025SMA330B4

Single FETs, MOSFETs Overview

The MSC025SMA330B4N is a silicon carbide (SiC) MOSFET manufactured by Microchip Technology, designed for high-voltage power applications. It features an N-channel configuration housed in a TO-247-4 Notch package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 3.3 kV and a maximum continuous drain current (Id) of 104 A. The device exhibits a low on-resistance (Rds(on)) of 25 mΩ. It operates within a temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon carbide semiconductor technology for superior thermal performance compared to traditional silicon devices.
• Features a TO-247-4 Notch package suitable for through-hole mounting in high-power designs.
• Provides high-efficiency switching capabilities with low on-resistance for reduced conduction losses.

Single FETs, MOSFETs Applications

• High-voltage power supply designs
• Industrial motor drives
• Uninterruptible power systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'B4N' against official Microchip documentation to confirm pinout and mechanical dimensions. Ensure compatibility with TO-247-4 footprints. Confirm RoHS compliance status via the manufacturer's datasheet before integration into regulated assemblies.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high blocking voltage and significant current handling capacity. The 25 mΩ on-resistance supports efficient power conversion. Consider thermal management requirements given the 104 A current rating and TO-247-4 package constraints.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's SiC MOSFET portfolio, targeting high-voltage industrial and automotive sectors. It complements other variants in the series offering different resistance and voltage ratings, providing designers with options for optimizing efficiency and cost in power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 3.3 kV SiC MOSFETs in TO-247-4 packages from Microchip or competitors, provided Rds(on) and Id ratings are equal or superior. Verify gate threshold voltage and package pinout compatibility before substitution.